Keyphrases
Floating Gate
100%
Multi-walled Carbon Nanotubes (MWCNTs)
80%
Poly(methyl methacrylate)
74%
Pentacene
58%
Memory Structure
53%
Memory Device
52%
Semiconductor Memory
50%
Metal-insulator-semiconductor
50%
Hysteresis
50%
Transfer Characteristics
49%
Capacitance-voltage
35%
Electrical Characteristics
34%
Organic Memory
33%
Organic Memory Transistor
33%
Poly(4-vinylphenol)
33%
Memory Transistors
33%
Au Nanoparticles (AuNPs)
33%
Output Characteristics
32%
Transistor
30%
Insulating Layer
30%
Threshold Voltage
28%
Charge Storage
28%
Memory Window
27%
Organic Memory Devices
25%
Memory Behavior
25%
Device-independent
25%
Large Memory Window
22%
Electrical Behavior
21%
Thin-film Transistors
20%
High Capacity
20%
Charge Retention
19%
Gate Dielectric
18%
Gate Electrode
17%
Significant Threshold
17%
Glass Substrate
17%
Threshold Voltage Shift
17%
Gate Bias
17%
Reliable Memory
17%
Graphene Properties
16%
Acceptor Materials
16%
High Open-circuit Voltage
16%
Dendrimer
16%
Silicon Structure
16%
AlOx
16%
Impedance Study
16%
Nanoporous Silicon
16%
Alternating Current Impedance
16%
Frequency Dependence
16%
Temperature Effect
16%
Storage Node
16%
Material Science
Carbon Nanotube
84%
Transistor
71%
Aluminum
45%
Thin-Film Transistor
40%
Electrical Property
40%
Poly Methyl Methacrylate
39%
Thin Films
37%
Capacitance
33%
Gold Nanoparticle
33%
Dielectric Material
29%
Silicon
21%
Dendrimer
16%
Electronic Circuit
16%
Graphene Oxide
16%
Oxide Compound
16%
Nanoparticle
16%
Bulk Heterojunction Solar Cell
16%
Nanotube
16%
Density
11%
Organic Solar Cells
10%
Grain Size
9%
Carrier Mobility
9%
Capacitor
8%
Heterojunction Structure
6%
Solar Cell
6%
Sodium Dodecyl Sulfate
5%
Polyethyleneimine
5%
Anodizing
5%
Monolayers
5%
Porous Silicon
5%
Electrical Impedance
5%
Oxide Surface
5%
Charge Carrier
5%
Aluminum Oxide
5%
Surface Treatment
5%
Film
5%
Semiconductor Structure
5%
Engineering
Single-Walled Carbon Nanotube
67%
Floating Gate
66%
Thin Films
30%
Charge Storage
26%
Insulating Layer
26%
Thin-Film Transistor
18%
Glass Substrate
17%
Gate Bias
17%
Gate Electrode
17%
Gold Nanoparticle
16%
Nodes
16%
Pentacene
16%
Single-Walled Nanotube
16%
Nanoporous Silicon
16%
Alternating Current
16%
Nanoparticle
16%
Hybrid Organic Memory Device
16%
Bistables
16%
Carbon Nanotube
16%
Conductive
16%
Silicon Substrate
14%
Storage Element
13%
Gate Dielectric
13%
Low-Temperature
8%
Porous Silicon
8%
Electrical Impedance
8%
Silicon Layer
8%
Loss Tangent
8%
Electron Injection
5%
Applied Voltage
5%
Silicon Dioxide (Sio2)
5%
Current-Voltage Characteristic
5%
Nonvolatile Memory
5%
Space Charge
5%
