Encapsulation of the heteroexpitaxial growth of wide band y-CuCl on silicon substrates

Allbwn ymchwil: Cyfraniad at gynhadledd › Papur

Iaith wreiddiol	Saesneg
Statws	Cyhoeddwyd - 1 Ion 2005
Digwyddiad	Proc 3rd Int. Conf. on Materials for Advanced Technologies (ICMAT 2005), Singapore. - Hyd: 3 Ion 0001 → …

Cynhadledd	Proc 3rd Int. Conf. on Materials for Advanced Technologies (ICMAT 2005), Singapore.
Cyfnod	3/01/01 → …

Dyfynnu hyn

@conference{e61d778a67aa45c2a8ea3e07486630bf,

title = "Encapsulation of the heteroexpitaxial growth of wide band y-CuCl on silicon substrates",

author = "F.O. Lucas and L. O'Reilly and G. Natarajan and P.J. McNally and S. Daniels and D.M. Taylor and S. William",

year = "2005",

month = jan,

day = "1",

language = "English",

note = "Proc 3rd Int. Conf. on Materials for Advanced Technologies (ICMAT 2005), Singapore. ; Conference date: 03-01-0001",

}

TY - CONF

T1 - Encapsulation of the heteroexpitaxial growth of wide band y-CuCl on silicon substrates

AU - Lucas, F.O.

AU - O'Reilly, L.

AU - Natarajan, G.

AU - McNally, P.J.

AU - Daniels, S.

AU - Taylor, D.M.

AU - William, S.

PY - 2005/1/1

Y1 - 2005/1/1

M3 - Paper

T2 - Proc 3rd Int. Conf. on Materials for Advanced Technologies (ICMAT 2005), Singapore.

Y2 - 3 January 0001

ER -