Fabrication of highly transparent self-switching diodes using single layer indium tin oxide.

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

Iaith wreiddiol	Saesneg
Tudalennau (o-i)	79-80
Cyfnodolyn	Electronics Letters
Cyfrol	45
Rhif cyhoeddi	1
Dynodwyr Gwrthrych Digidol (DOIs)	https://doi.org/10.1049/e1:20092309
Statws	Cyhoeddwyd - 1 Ion 2009

Mynediad at Ddogfen

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title = "Fabrication of highly transparent self-switching diodes using single layer indium tin oxide.",

keywords = "ENGINEERING, ELECTRICAL \& ELECTRONIC",

author = "J.P. Kettle and J. Kettle and R.M. Perks and R.T. Hoyle",

year = "2009",

month = jan,

day = "1",

doi = "10.1049/e1:20092309",

language = "English",

volume = "45",

pages = "79--80",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "1",

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TY - JOUR

T1 - Fabrication of highly transparent self-switching diodes using single layer indium tin oxide.

AU - Kettle, J.P.

AU - Kettle, J.

AU - Perks, R.M.

AU - Hoyle, R.T.

PY - 2009/1/1

Y1 - 2009/1/1

KW - ENGINEERING

KW - ELECTRICAL & ELECTRONIC

U2 - 10.1049/e1:20092309

DO - 10.1049/e1:20092309

M3 - Article

SN - 0013-5194

VL - 45

SP - 79

EP - 80

JO - Electronics Letters

JF - Electronics Letters

IS - 1

ER -