Graphene oxide-based non-volatile organic field effect memory transistors

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

Iaith wreiddiol	Saesneg
Tudalennau (o-i)	67-71
Cyfnodolyn	IET Circuits, Devices and Systems
Cyfrol	9
Rhif cyhoeddi	1
Dynodwyr Gwrthrych Digidol (DOIs)	https://doi.org/10.1049/iet-cds.2014.0064
Statws	Cyhoeddwyd - 23 Ion 2015

Mynediad at Ddogfen

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title = "Graphene oxide-based non-volatile organic field effect memory transistors",

author = "P.W. Sayers and H.S. Alaabdlqader and A. Sleiman and P. Sayers and M.F. Mabrook",

year = "2015",

month = jan,

day = "23",

doi = "10.1049/iet-cds.2014.0064",

language = "English",

volume = "9",

pages = "67--71",

journal = "IET Circuits, Devices and Systems",

issn = "1751-858X",

publisher = "John Wiley and Sons Ltd",

number = "1",

}

TY - JOUR

T1 - Graphene oxide-based non-volatile organic field effect memory transistors

AU - Sayers, P.W.

AU - Alaabdlqader, H.S.

AU - Sleiman, A.

AU - Sayers, P.

AU - Mabrook, M.F.

PY - 2015/1/23

Y1 - 2015/1/23

U2 - 10.1049/iet-cds.2014.0064

DO - 10.1049/iet-cds.2014.0064

M3 - Article

SN - 1751-858X

VL - 9

SP - 67

EP - 71

JO - IET Circuits, Devices and Systems

JF - IET Circuits, Devices and Systems

IS - 1

ER -