Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

Iaith wreiddiol	Saesneg
Tudalennau (o-i)	164506 - 164506-5
Cyfnodolyn	Journal of Applied Physics
Cyfrol	113
Rhif cyhoeddi	16
Dynodwyr Gwrthrych Digidol (DOIs)	https://doi.org/10.1063/1.4803062
Statws	Cyhoeddwyd - 1 Ebr 2013

Mynediad at Ddogfen

@article{07f0813f48f346299a7b413573f643e9,

title = "Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures",

author = "A. Sleiman and P.W. Sayers and M.F. Mabrook",

year = "2013",

month = apr,

day = "1",

doi = "10.1063/1.4803062",

language = "English",

volume = "113",

pages = "164506 -- 164506--5",

journal = "Journal of Applied Physics",

publisher = "American Institute of Physics",

number = "16",

}