The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors

E. Itoh; I. Torres; D.M. Taylor

doi:10.1143/JJAP.44.641

The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors

E. Itoh
, I. Torres
, D.M. Taylor

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

Iaith wreiddiol	Saesneg
Tudalennau (o-i)	641-647
Cyfnodolyn	Japanese Journal of Applied Physics
Cyfrol	44
Rhif cyhoeddi	1B
Dynodwyr Gwrthrych Digidol (DOIs)	https://doi.org/10.1143/JJAP.44.641
Statws	Cyhoeddwyd - 1 Ion 2005

Mynediad at Ddogfen

10.1143/JJAP.44.641

Dyfynnu hyn

@article{1d82dea222ed4f8ea139733a97041760,

title = "The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors",

keywords = "PHYSICS, APPLIED",

author = "E. Itoh and I. Torres and D.M. Taylor",

year = "2005",

month = jan,

day = "1",

doi = "10.1143/JJAP.44.641",

language = "English",

volume = "44",

pages = "641--647",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "1B",

}

The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors. / Itoh, E.; Torres, I.; Taylor, D.M.
Yn: Japanese Journal of Applied Physics, Cyfrol 44, Rhif 1B, 01.01.2005, t. 641-647.

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

TY - JOUR

T1 - The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors

AU - Itoh, E.

AU - Torres, I.

AU - Taylor, D.M.

PY - 2005/1/1

Y1 - 2005/1/1

KW - PHYSICS

KW - APPLIED

U2 - 10.1143/JJAP.44.641

DO - 10.1143/JJAP.44.641

M3 - Article

SN - 0021-4922

VL - 44

SP - 641

EP - 647

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 1B

ER -