Wafer Bonded Subwavelength Metallo-Dielectric Laser

O. Bondarenko; A. Simic; Q. Gu; J. H. Lee; B. Slutsky; M. P. Nezhad; Y. Fainman

doi:10.1109/JPHOT.2011.2146763

Wafer Bonded Subwavelength Metallo-Dielectric Laser

O. Bondarenko
, A. Simic
, Q. Gu
, J. H. Lee
, B. Slutsky
, M. P. Nezhad
, Y. Fainman

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Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

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Light sources that are compatible with the silicon photonics platform are the key elements neededfor photonicintegrated circuitson silicon.Here, wereport opticallypumped wafer bonded metallodielectric lasers, subwavelength in all three dimensions (250-nm gain core radius) operating at 77 K, as well as near-subwavelength (450-nm gain core radius) operating at room temperature.

Iaith wreiddiol	Saesneg
Tudalennau (o-i)	608-616
Nifer y tudalennau	9
Cyfnodolyn	IEEE Photonics Journal
Cyfrol	3
Rhif cyhoeddi	3
Dyddiad ar-lein cynnar	1 Meh 2011
Dynodwyr Gwrthrych Digidol (DOIs)	https://doi.org/10.1109/JPHOT.2011.2146763
Statws	Cyhoeddwyd - 26 Meh 2011

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10.1109/JPHOT.2011.2146763Trwydded: !!Unspecified

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@article{c19d719622a844f19d0375a286df28af,

title = "Wafer Bonded Subwavelength Metallo-Dielectric Laser",

abstract = " Light sources that are compatible with the silicon photonics platform are the key elements neededfor photonicintegrated circuitson silicon.Here, wereport opticallypumped wafer bonded metallodielectric lasers, subwavelength in all three dimensions (250-nm gain core radius) operating at 77 K, as well as near-subwavelength (450-nm gain core radius) operating at room temperature. ",

author = "O. Bondarenko and A. Simic and Q. Gu and Lee, \{J. H.\} and B. Slutsky and Nezhad, \{M. P.\} and Y. Fainman",

year = "2011",

month = jun,

day = "26",

doi = "10.1109/JPHOT.2011.2146763",

language = "English",

volume = "3",

pages = "608--616",

journal = "IEEE Photonics Journal",

issn = "1943-0655",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Wafer Bonded Subwavelength Metallo-Dielectric Laser

AU - Bondarenko, O.

AU - Simic, A.

AU - Gu, Q.

AU - Lee, J. H.

AU - Slutsky, B.

AU - Nezhad, M. P.

AU - Fainman, Y.

PY - 2011/6/26

Y1 - 2011/6/26

N2 - Light sources that are compatible with the silicon photonics platform are the key elements neededfor photonicintegrated circuitson silicon.Here, wereport opticallypumped wafer bonded metallodielectric lasers, subwavelength in all three dimensions (250-nm gain core radius) operating at 77 K, as well as near-subwavelength (450-nm gain core radius) operating at room temperature.

AB - Light sources that are compatible with the silicon photonics platform are the key elements neededfor photonicintegrated circuitson silicon.Here, wereport opticallypumped wafer bonded metallodielectric lasers, subwavelength in all three dimensions (250-nm gain core radius) operating at 77 K, as well as near-subwavelength (450-nm gain core radius) operating at room temperature.

U2 - 10.1109/JPHOT.2011.2146763

DO - 10.1109/JPHOT.2011.2146763

M3 - Article

SN - 1943-0655

VL - 3

SP - 608

EP - 616

JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

IS - 3

ER -

Wafer Bonded Subwavelength Metallo-Dielectric Laser

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