Bleaching effect in passive regions of powerful 1.02 mu m InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure.

G.I. Ryabtsev; T.V. Bezyazychnaya; M.V. Bogdanovich; V.V. Parastchuk; A.I. Yenzhyieuski; L.I. Burov; A.S. Gorbatsevich; A.G. Ryabtsev; M.A. Shchemelev; V.V. Bezotosnyi; K.A. Shore; S. Banerjee

doi:10.1007/s00340-007-2912-3

Bleaching effect in passive regions of powerful 1.02 mu m InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure.

G.I. Ryabtsev
, T.V. Bezyazychnaya
, M.V. Bogdanovich
, V.V. Parastchuk
, A.I. Yenzhyieuski
, L.I. Burov
, A.S. Gorbatsevich
, A.G. Ryabtsev
, M.A. Shchemelev
, V.V. Bezotosnyi
, K.A. Shore
, S. Banerjee

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	471-476
Journal	Applied Physics B-Lasers and Optics
Volume	90
Issue number	3-4
DOIs	https://doi.org/10.1007/s00340-007-2912-3
Publication status	Published - 1 Mar 2008

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10.1007/s00340-007-2912-3

Cite this

Ryabtsev, G. I., Bezyazychnaya, T. V., Bogdanovich, M. V., Parastchuk, V. V., Yenzhyieuski, A. I., Burov, L. I., Gorbatsevich, A. S., Ryabtsev, A. G., Shchemelev, M. A., Bezotosnyi, V. V., Shore, K. A., & Banerjee, S. (2008). Bleaching effect in passive regions of powerful 1.02 mu m InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure. Applied Physics B-Lasers and Optics, 90(3-4), 471-476. https://doi.org/10.1007/s00340-007-2912-3

@article{2e2544b7ced54479bd519afd0529c392,

title = "Bleaching effect in passive regions of powerful 1.02 mu m InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure.",

author = "G.I. Ryabtsev and T.V. Bezyazychnaya and M.V. Bogdanovich and V.V. Parastchuk and A.I. Yenzhyieuski and L.I. Burov and A.S. Gorbatsevich and A.G. Ryabtsev and M.A. Shchemelev and V.V. Bezotosnyi and K.A. Shore and S. Banerjee",

year = "2008",

month = mar,

day = "1",

doi = "10.1007/s00340-007-2912-3",

language = "English",

volume = "90",

pages = "471--476",

journal = "Applied Physics B-Lasers and Optics",

issn = "0946-2171",

publisher = "Springer Verlag",

number = "3-4",

}

Ryabtsev, GI, Bezyazychnaya, TV, Bogdanovich, MV, Parastchuk, VV, Yenzhyieuski, AI, Burov, LI, Gorbatsevich, AS, Ryabtsev, AG, Shchemelev, MA, Bezotosnyi, VV, Shore, KA & Banerjee, S 2008, 'Bleaching effect in passive regions of powerful 1.02 mu m InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure.', Applied Physics B-Lasers and Optics, vol. 90, no. 3-4, pp. 471-476. https://doi.org/10.1007/s00340-007-2912-3

TY - JOUR

T1 - Bleaching effect in passive regions of powerful 1.02 mu m InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure.

AU - Ryabtsev, G.I.

AU - Bezyazychnaya, T.V.

AU - Bogdanovich, M.V.

AU - Parastchuk, V.V.

AU - Yenzhyieuski, A.I.

AU - Burov, L.I.

AU - Gorbatsevich, A.S.

AU - Ryabtsev, A.G.

AU - Shchemelev, M.A.

AU - Bezotosnyi, V.V.

AU - Shore, K.A.

AU - Banerjee, S.

PY - 2008/3/1

Y1 - 2008/3/1

U2 - 10.1007/s00340-007-2912-3

DO - 10.1007/s00340-007-2912-3

M3 - Article

SN - 0946-2171

VL - 90

SP - 471

EP - 476

JO - Applied Physics B-Lasers and Optics

JF - Applied Physics B-Lasers and Optics

IS - 3-4

ER -