Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches

C. Goldsmith; A. Sumant; O. Auciello; J.A. Carlisle; H. Zeng; J. Hwang; C. Palego; W. Wang; R. Carpick; V.P. Adiga; A. Datta; C. Gudeman; S. O'Brien; S. Sampath

doi:10.1109/MWSYM.2010.5517781

Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches

C. Goldsmith
, A. Sumant
, O. Auciello
, J.A. Carlisle
, H. Zeng
, J. Hwang
, C. Palego
, W. Wang
, R. Carpick
, V.P. Adiga
, A. Datta
, C. Gudeman
, S. O'Brien
, S. Sampath

Research output: Contribution to conference › Paper

Abstract

Modifications to a standard capacitive MEMS switch process have been made to allow the incorporation of ultra-nano-crystalline diamond as the switch dielectric. The impact on electromechanical performance is minimal. However, these devices exhibit uniquely different charging characteristics, with charging and discharging time constants 5-6 orders of magnitude quicker than conventional materials. This operation opens the possibility of devices which have no adverse effects of dielectric charging and can be operated near-continuously in the actuated state without significant degradation in reliability.

Original language	English
Pages	1246-1249
DOIs	https://doi.org/10.1109/MWSYM.2010.5517781
Publication status	Published - 23 May 2010
Event	Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010 - Duration: 3 Jan 0001 → …

Conference

Conference	Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010
Period	3/01/01 → …

Access to Document

10.1109/MWSYM.2010.5517781

Cite this

Goldsmith, C., Sumant, A., Auciello, O., Carlisle, J. A., Zeng, H., Hwang, J., Palego, C., Wang, W., Carpick, R., Adiga, V. P., Datta, A., Gudeman, C., O'Brien, S., & Sampath, S. (2010). Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches. 1246-1249. Paper presented at Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010. https://doi.org/10.1109/MWSYM.2010.5517781

@conference{5d65937b25f8455282de0e10dda93d29,

title = "Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches",

abstract = "Modifications to a standard capacitive MEMS switch process have been made to allow the incorporation of ultra-nano-crystalline diamond as the switch dielectric. The impact on electromechanical performance is minimal. However, these devices exhibit uniquely different charging characteristics, with charging and discharging time constants 5-6 orders of magnitude quicker than conventional materials. This operation opens the possibility of devices which have no adverse effects of dielectric charging and can be operated near-continuously in the actuated state without significant degradation in reliability.",

author = "C. Goldsmith and A. Sumant and O. Auciello and J.A. Carlisle and H. Zeng and J. Hwang and C. Palego and W. Wang and R. Carpick and V.P. Adiga and A. Datta and C. Gudeman and S. O'Brien and S. Sampath",

year = "2010",

month = may,

day = "23",

doi = "10.1109/MWSYM.2010.5517781",

language = "English",

pages = "1246--1249",

note = "Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010 ; Conference date: 03-01-0001",

}

Goldsmith, C, Sumant, A, Auciello, O, Carlisle, JA, Zeng, H, Hwang, J, Palego, C, Wang, W, Carpick, R, Adiga, VP, Datta, A, Gudeman, C, O'Brien, S & Sampath, S 2010, 'Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches', Paper presented at Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010, 3/01/01 pp. 1246-1249. https://doi.org/10.1109/MWSYM.2010.5517781

TY - CONF

T1 - Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches

AU - Goldsmith, C.

AU - Sumant, A.

AU - Auciello, O.

AU - Carlisle, J.A.

AU - Zeng, H.

AU - Hwang, J.

AU - Palego, C.

AU - Wang, W.

AU - Carpick, R.

AU - Adiga, V.P.

AU - Datta, A.

AU - Gudeman, C.

AU - O'Brien, S.

AU - Sampath, S.

PY - 2010/5/23

Y1 - 2010/5/23

N2 - Modifications to a standard capacitive MEMS switch process have been made to allow the incorporation of ultra-nano-crystalline diamond as the switch dielectric. The impact on electromechanical performance is minimal. However, these devices exhibit uniquely different charging characteristics, with charging and discharging time constants 5-6 orders of magnitude quicker than conventional materials. This operation opens the possibility of devices which have no adverse effects of dielectric charging and can be operated near-continuously in the actuated state without significant degradation in reliability.

AB - Modifications to a standard capacitive MEMS switch process have been made to allow the incorporation of ultra-nano-crystalline diamond as the switch dielectric. The impact on electromechanical performance is minimal. However, these devices exhibit uniquely different charging characteristics, with charging and discharging time constants 5-6 orders of magnitude quicker than conventional materials. This operation opens the possibility of devices which have no adverse effects of dielectric charging and can be operated near-continuously in the actuated state without significant degradation in reliability.

U2 - 10.1109/MWSYM.2010.5517781

DO - 10.1109/MWSYM.2010.5517781

M3 - Paper

SP - 1246

EP - 1249

T2 - Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, Anaheim, USA, 23-28 May 2010

Y2 - 3 January 0001

ER -

Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches

Abstract

Conference

Access to Document

Fingerprint

Cite this