Current-voltage and light-current characteristics in highly strained InGaAs/InAlAs quantum cascade laser structures.

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	497-501
Journal	IEEE Proceedings - Circuits Devices and Systems
Volume	152
Issue number	5
DOIs	https://doi.org/10.1049/ip-cds:20045042
Publication status	Published - 1 Oct 2005

Keywords

@article{c46810c24f814494a36295748c32412c,

title = "Current-voltage and light-current characteristics in highly strained InGaAs/InAlAs quantum cascade laser structures.",

keywords = "ENGINEERING, ELECTRICAL \& ELECTRONIC",

author = "S. Banerjee and K.A. Shore and C.J. Mitchell and J.L. Sly and M. Missous",

year = "2005",

month = oct,

day = "1",

doi = "10.1049/ip-cds:20045042",

language = "English",

volume = "152",

pages = "497--501",

journal = "IEEE Proceedings - Circuits Devices and Systems",

issn = "1350-2409",

publisher = "Institution of Engineering and Technology",

number = "5",

}

TY - JOUR

T1 - Current-voltage and light-current characteristics in highly strained InGaAs/InAlAs quantum cascade laser structures.

AU - Banerjee, S.

AU - Shore, K.A.

AU - Mitchell, C.J.

AU - Sly, J.L.

AU - Missous, M.

PY - 2005/10/1

Y1 - 2005/10/1

KW - ENGINEERING

KW - ELECTRICAL & ELECTRONIC

U2 - 10.1049/ip-cds:20045042

DO - 10.1049/ip-cds:20045042

M3 - Article

SN - 1350-2409

VL - 152

SP - 497

EP - 501

JO - IEEE Proceedings - Circuits Devices and Systems

JF - IEEE Proceedings - Circuits Devices and Systems

IS - 5

ER -