Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)

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Keywords

@article{d9ccadd309aa496a9f77dbf8aa9b7b84,

title = "Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)",

keywords = "PHYSICS, APPLIED",

author = "D.M. Taylor and N. Alves",

year = "2008",

month = mar,

day = "13",

doi = "10.1063/1.2897238",

language = "English",

volume = "92",

pages = "103312",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)

AU - Taylor, D.M.

AU - Alves, N.

PY - 2008/3/13

Y1 - 2008/3/13

KW - PHYSICS

KW - APPLIED

U2 - 10.1063/1.2897238

DO - 10.1063/1.2897238

M3 - Article

SN - 0003-6951

VL - 92

SP - 103312

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -