Electrical behavior of memory devices based on fluorene-containing organic thin films.

P. Dimitrakis; P. Normand; D. Tsoukalas; C. Pearson; J.H. Ahn; M.F. Mabrook; D.A. Zeze; M.C. Petty; K.T. Kamtekar; C. Wang; M.R. Bryce; M. Green

doi:10.1063/1.2968551

Electrical behavior of memory devices based on fluorene-containing organic thin films.

P. Dimitrakis, P. Normand, D. Tsoukalas, C. Pearson, J.H. Ahn, M.F. Mabrook, D.A. Zeze, M.C. Petty, K.T. Kamtekar, C. Wang, M.R. Bryce, M. Green

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	044510
Journal	Journal of Applied Physics
Volume	104
Issue number	4
DOIs	https://doi.org/10.1063/1.2968551
Publication status	Published - 15 Aug 2008

Keywords

PHYSICS
APPLIED

Access to Document

10.1063/1.2968551

Cite this

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title = "Electrical behavior of memory devices based on fluorene-containing organic thin films.",

keywords = "PHYSICS, APPLIED",

author = "P. Dimitrakis and P. Normand and D. Tsoukalas and C. Pearson and J.H. Ahn and M.F. Mabrook and D.A. Zeze and M.C. Petty and K.T. Kamtekar and C. Wang and M.R. Bryce and M. Green",

year = "2008",

month = aug,

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language = "English",

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AU - Dimitrakis, P.

AU - Normand, P.

AU - Tsoukalas, D.

AU - Pearson, C.

AU - Ahn, J.H.

AU - Mabrook, M.F.

AU - Zeze, D.A.

AU - Petty, M.C.

AU - Kamtekar, K.T.

AU - Wang, C.

AU - Bryce, M.R.

AU - Green, M.

PY - 2008/8/15

Y1 - 2008/8/15

KW - PHYSICS

KW - APPLIED

U2 - 10.1063/1.2968551

DO - 10.1063/1.2968551

M3 - Article

SN - 0021-8979

VL - 104

SP - 044510

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -