Electrostatics of Coaxial Schottky-Barrier Nanotube Field-Effect Transistors.

D.L. John; L.C. Castro; J. Clifford; D.L. Pulfrey

doi:10.1109/TNANO.2003.817228

Electrostatics of Coaxial Schottky-Barrier Nanotube Field-Effect Transistors.

D.L. John
, L.C. Castro
, J. Clifford
, D.L. Pulfrey

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	175-180
Journal	IEEE Transactions On Nanotechnology
Volume	2
Issue number	3
DOIs	https://doi.org/10.1109/TNANO.2003.817228
Publication status	Published - 1 Sept 2003

Keywords

ENGINEERING
ELECTRICAL & ELECTRONIC
MATERIALS SCIENCE
MULTIDISCIPLINARY
NANOSCIENCE & NANOTECHNOLOGY
PHYSICS
APPLIED

Access to Document

10.1109/TNANO.2003.817228

Cite this

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title = "Electrostatics of Coaxial Schottky-Barrier Nanotube Field-Effect Transistors.",

keywords = "ENGINEERING, ELECTRICAL \& ELECTRONIC, MATERIALS SCIENCE, MULTIDISCIPLINARY, NANOSCIENCE \& NANOTECHNOLOGY, PHYSICS, APPLIED",

author = "D.L. John and L.C. Castro and J. Clifford and D.L. Pulfrey",

year = "2003",

month = sep,

day = "1",

doi = "10.1109/TNANO.2003.817228",

language = "English",

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journal = "IEEE Transactions On Nanotechnology",

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AU - Castro, L.C.

AU - Clifford, J.

AU - Pulfrey, D.L.

PY - 2003/9/1

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KW - ENGINEERING

KW - ELECTRICAL & ELECTRONIC

KW - MATERIALS SCIENCE

KW - MULTIDISCIPLINARY

KW - NANOSCIENCE & NANOTECHNOLOGY

KW - PHYSICS

KW - APPLIED

U2 - 10.1109/TNANO.2003.817228

DO - 10.1109/TNANO.2003.817228

M3 - Article

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VL - 2

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EP - 180

JO - IEEE Transactions On Nanotechnology

JF - IEEE Transactions On Nanotechnology

IS - 3

ER -