Floating-gate memory based on an organic metal-insulator-semiconductor capacitor.

S. William, M.F. Mabrook, D.M. Taylor

Research output: Contribution to journal › Article › peer-review

Keywords

@article{35c219c78fa3408c84e8030471415b36,

title = "Floating-gate memory based on an organic metal-insulator-semiconductor capacitor.",

keywords = "PHYSICS, APPLIED",

author = "S. William and M.F. Mabrook and D.M. Taylor",

year = "2009",

month = aug,

day = "31",

doi = "10.1063/1.3223606",

language = "English",

volume = "95",

pages = "093309",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Floating-gate memory based on an organic metal-insulator-semiconductor capacitor.

AU - William, S.

AU - Mabrook, M.F.

AU - Taylor, D.M.

PY - 2009/8/31

Y1 - 2009/8/31

KW - PHYSICS

KW - APPLIED

U2 - 10.1063/1.3223606

DO - 10.1063/1.3223606

M3 - Article

SN - 0003-6951

VL - 95

SP - 093309

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -