Graphene oxide-based non-volatile organic field effect memory transistors

P.W. Sayers, H.S. Alaabdlqader, A. Sleiman, P. Sayers, M.F. Mabrook

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	67-71
Journal	IET Circuits, Devices and Systems
Volume	9
Issue number	1
DOIs	https://doi.org/10.1049/iet-cds.2014.0064
Publication status	Published - 23 Jan 2015

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@article{223f2b3064514d87a51d725729810631,

title = "Graphene oxide-based non-volatile organic field effect memory transistors",

author = "P.W. Sayers and H.S. Alaabdlqader and A. Sleiman and P. Sayers and M.F. Mabrook",

year = "2015",

month = jan,

day = "23",

doi = "10.1049/iet-cds.2014.0064",

language = "English",

volume = "9",

pages = "67--71",

journal = "IET Circuits, Devices and Systems",

issn = "1751-858X",

publisher = "Institution of Engineering and Technology",

number = "1",

}

TY - JOUR

T1 - Graphene oxide-based non-volatile organic field effect memory transistors

AU - Sayers, P.W.

AU - Alaabdlqader, H.S.

AU - Sleiman, A.

AU - Sayers, P.

AU - Mabrook, M.F.

PY - 2015/1/23

Y1 - 2015/1/23

U2 - 10.1049/iet-cds.2014.0064

DO - 10.1049/iet-cds.2014.0064

M3 - Article

SN - 1751-858X

VL - 9

SP - 67

EP - 71

JO - IET Circuits, Devices and Systems

JF - IET Circuits, Devices and Systems

IS - 1

ER -