High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications

R. X. G. Ferreira; E. Xie; J. J. D. McKendry; Sujan Rajbhandari; H. Chun; G. Faulkner; S. Watson; A. E. Kelly; E. Gu; R. V. Penty; I. H. White; D. C. O’Brien; M. D. Dawson

doi:10.1109/LPT.2016.2581318

High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications

R. X. G. Ferreira
, E. Xie
, J. J. D. McKendry
, Sujan Rajbhandari
, H. Chun
, G. Faulkner
, S. Watson
, A. E. Kelly
, E. Gu
, R. V. Penty
, I. H. White
, D. C. O’Brien
, M. D. Dawson

Coventry University

Research output: Contribution to journal › Article › peer-review

Abstract

Gallium-nitride (GaN)-based light-emitting diodes (LEDs) are highly efficient sources for general purpose illumination. Visible light communications (VLC) uses these sources to supplement existing wireless communications by offering a large, licence-free region of optical spectrum. Here, we report on progress in the development of micro-scale GaN LEDs (micro-LEDs), optimized for VLC. These blue-emitting micro-LEDs are shown to have very high electrical-to-optical modulation bandwidths, exceeding 800 MHz. The data transmission capabilities of the micro-LEDs are illustrated by demonstrations using ON-OFF-keying, pulse-amplitude modulation, and orthogonal frequency division multiplexing modulation schemes to transmit data over free space at the rates of 1.7, 3.4, and 5 Gb/s, respectively.

Original language	English
Pages (from-to)	2023-2026
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	28
Issue number	19
DOIs	https://doi.org/10.1109/LPT.2016.2581318
Publication status	Published - 1 Oct 2016
Externally published	Yes

Keywords

Light emitting diodes
Bandwidth
Modulation
Current density
OFDM
Data communication
Bit error rate
pulse amplitude modulation
amplitude shift keying
free-space optical communication
gallium compounds
III-V semiconductors
integrated optoelectronics
light emitting diodes
OFDM modulation
optical communication equipment
PAM
micro light-emitting diodes
GaN
optical communication
visible-light communication

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10.1109/LPT.2016.2581318

Cite this

@article{528cd384a5d6492dac474cb441af208e,

title = "High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications",

abstract = "Gallium-nitride (GaN)-based light-emitting diodes (LEDs) are highly efficient sources for general purpose illumination. Visible light communications (VLC) uses these sources to supplement existing wireless communications by offering a large, licence-free region of optical spectrum. Here, we report on progress in the development of micro-scale GaN LEDs (micro-LEDs), optimized for VLC. These blue-emitting micro-LEDs are shown to have very high electrical-to-optical modulation bandwidths, exceeding 800 MHz. The data transmission capabilities of the micro-LEDs are illustrated by demonstrations using ON-OFF-keying, pulse-amplitude modulation, and orthogonal frequency division multiplexing modulation schemes to transmit data over free space at the rates of 1.7, 3.4, and 5 Gb/s, respectively.",

keywords = "Light emitting diodes, Bandwidth, Modulation, Current density, OFDM, Data communication, Bit error rate, pulse amplitude modulation, amplitude shift keying, free-space optical communication, gallium compounds, III-V semiconductors, integrated optoelectronics, light emitting diodes, OFDM modulation, optical communication equipment, PAM, micro light-emitting diodes, GaN, optical communication, visible-light communication",

author = "Ferreira, \{R. X. G.\} and E. Xie and McKendry, \{J. J. D.\} and Sujan Rajbhandari and H. Chun and G. Faulkner and S. Watson and Kelly, \{A. E.\} and E. Gu and Penty, \{R. V.\} and White, \{I. H.\} and O{\textquoteright}Brien, \{D. C.\} and Dawson, \{M. D.\}",

note = "This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see http://creativecommons.org/licenses/by/3.0/",

year = "2016",

month = oct,

day = "1",

doi = "10.1109/LPT.2016.2581318",

language = "English",

volume = "28",

pages = "2023--2026",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "19",

}

TY - JOUR

T1 - High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications

AU - Ferreira, R. X. G.

AU - Xie, E.

AU - McKendry, J. J. D.

AU - Rajbhandari, Sujan

AU - Chun, H.

AU - Faulkner, G.

AU - Watson, S.

AU - Kelly, A. E.

AU - Gu, E.

AU - Penty, R. V.

AU - White, I. H.

AU - O’Brien, D. C.

AU - Dawson, M. D.

N1 - This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see http://creativecommons.org/licenses/by/3.0/

PY - 2016/10/1

Y1 - 2016/10/1

N2 - Gallium-nitride (GaN)-based light-emitting diodes (LEDs) are highly efficient sources for general purpose illumination. Visible light communications (VLC) uses these sources to supplement existing wireless communications by offering a large, licence-free region of optical spectrum. Here, we report on progress in the development of micro-scale GaN LEDs (micro-LEDs), optimized for VLC. These blue-emitting micro-LEDs are shown to have very high electrical-to-optical modulation bandwidths, exceeding 800 MHz. The data transmission capabilities of the micro-LEDs are illustrated by demonstrations using ON-OFF-keying, pulse-amplitude modulation, and orthogonal frequency division multiplexing modulation schemes to transmit data over free space at the rates of 1.7, 3.4, and 5 Gb/s, respectively.

AB - Gallium-nitride (GaN)-based light-emitting diodes (LEDs) are highly efficient sources for general purpose illumination. Visible light communications (VLC) uses these sources to supplement existing wireless communications by offering a large, licence-free region of optical spectrum. Here, we report on progress in the development of micro-scale GaN LEDs (micro-LEDs), optimized for VLC. These blue-emitting micro-LEDs are shown to have very high electrical-to-optical modulation bandwidths, exceeding 800 MHz. The data transmission capabilities of the micro-LEDs are illustrated by demonstrations using ON-OFF-keying, pulse-amplitude modulation, and orthogonal frequency division multiplexing modulation schemes to transmit data over free space at the rates of 1.7, 3.4, and 5 Gb/s, respectively.

KW - Light emitting diodes

KW - Bandwidth

KW - Modulation

KW - Current density

KW - OFDM

KW - Data communication

KW - Bit error rate

KW - pulse amplitude modulation

KW - amplitude shift keying

KW - free-space optical communication

KW - gallium compounds

KW - III-V semiconductors

KW - integrated optoelectronics

KW - light emitting diodes

KW - OFDM modulation

KW - optical communication equipment

KW - PAM

KW - micro light-emitting diodes

KW - GaN

KW - optical communication

KW - visible-light communication

U2 - 10.1109/LPT.2016.2581318

DO - 10.1109/LPT.2016.2581318

M3 - Article

SN - 1041-1135

VL - 28

SP - 2023

EP - 2026

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 19

ER -

High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications

Abstract

Keywords

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