High-power high-contrast RF MEMS capacitive switch

F. Solazzi; C. Palego; D. Molinero; P. Farinelli; S. Colpo; J.C. Hwang; B. Margesin; R. Sorrentino

High-power high-contrast RF MEMS capacitive switch

F. Solazzi, C. Palego, D. Molinero, P. Farinelli, S. Colpo, J.C. Hwang, B. Margesin, R. Sorrentino

Research output: Contribution to conference › Paper

Abstract

This paper reports on the first RF MEMS capacitive switch with a capacitance ratio of 130 that is stable almost up to 3 W of RF power. From an RF point of view the device behaves as a shunt capacitive switch, but employs an ohmic contact between the movable membrane and a floating metal deposited on the dielectric-coated stationary electrode, which is used to provide a high and repeatable ON state capacitance. In addition strain-relief anchor springs guarantee almost stable performances at high temperature and high power.

Original language	English
Pages	32-35
Publication status	Published - 29 Oct 2012
Event	7th European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, 29-30 October 2012 - Duration: 3 Jan 0002 → …

Conference

Conference	7th European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, 29-30 October 2012
Period	3/01/02 → …

Cite this

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title = "High-power high-contrast RF MEMS capacitive switch",

abstract = "This paper reports on the first RF MEMS capacitive switch with a capacitance ratio of 130 that is stable almost up to 3 W of RF power. From an RF point of view the device behaves as a shunt capacitive switch, but employs an ohmic contact between the movable membrane and a floating metal deposited on the dielectric-coated stationary electrode, which is used to provide a high and repeatable ON state capacitance. In addition strain-relief anchor springs guarantee almost stable performances at high temperature and high power.",

author = "F. Solazzi and C. Palego and D. Molinero and P. Farinelli and S. Colpo and J.C. Hwang and B. Margesin and R. Sorrentino",

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AU - Solazzi, F.

AU - Palego, C.

AU - Molinero, D.

AU - Farinelli, P.

AU - Colpo, S.

AU - Hwang, J.C.

AU - Margesin, B.

AU - Sorrentino, R.

PY - 2012/10/29

Y1 - 2012/10/29

N2 - This paper reports on the first RF MEMS capacitive switch with a capacitance ratio of 130 that is stable almost up to 3 W of RF power. From an RF point of view the device behaves as a shunt capacitive switch, but employs an ohmic contact between the movable membrane and a floating metal deposited on the dielectric-coated stationary electrode, which is used to provide a high and repeatable ON state capacitance. In addition strain-relief anchor springs guarantee almost stable performances at high temperature and high power.

AB - This paper reports on the first RF MEMS capacitive switch with a capacitance ratio of 130 that is stable almost up to 3 W of RF power. From an RF point of view the device behaves as a shunt capacitive switch, but employs an ohmic contact between the movable membrane and a floating metal deposited on the dielectric-coated stationary electrode, which is used to provide a high and repeatable ON state capacitance. In addition strain-relief anchor springs guarantee almost stable performances at high temperature and high power.

UR - http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6483728&newsearch=true&queryText=High-power%20high-contrast%20RF%20MEMS%20capacitive%20switch

M3 - Paper

SP - 32

EP - 35

T2 - 7th European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, 29-30 October 2012

Y2 - 3 January 0002

ER -

High-power high-contrast RF MEMS capacitive switch

Abstract

Conference

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