Intermodulation distortion in MEMS capacitive switches under high RF power

D. Molinero; X. Luo; Y. Ning; C. Palego; J. Hwang; C.L. Goldsmith

doi:10.1109/MWSYM.2013.6697357

Intermodulation distortion in MEMS capacitive switches under high RF power

D. Molinero, X. Luo, Y. Ning, C. Palego, J. Hwang, C.L. Goldsmith

Research output: Contribution to conference › Paper

Abstract

ntermodulation distortion in MEMS capacitive switches was analyzed both theoretically and experimentally as a function of tone spacing and RF power. The theory and experiment consistently showed that, under high RF power, additional distortion was caused by self-heating of the switch membrane by the RF power, which decreased the membrane spring constant significantly. The results implied that, well before the input RF power triggers self-actuation, the distortion might increase rapidly to an unacceptable level, so that the power-handling capacity of MEMS capacitive switches would be limited by intermodulation distortion instead of self-actuation.

Original language	English
Pages	1-3
DOIs	https://doi.org/10.1109/MWSYM.2013.6697357
Publication status	Published - 2 Jun 2013
Event	IEEE MTT-S International Microwave Symposium Digest (IMS), Seattle, USA, June 2013 - Duration: 3 Jan 0001 → …

Conference

Conference	IEEE MTT-S International Microwave Symposium Digest (IMS), Seattle, USA, June 2013
Period	3/01/01 → …

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10.1109/MWSYM.2013.6697357

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abstract = "ntermodulation distortion in MEMS capacitive switches was analyzed both theoretically and experimentally as a function of tone spacing and RF power. The theory and experiment consistently showed that, under high RF power, additional distortion was caused by self-heating of the switch membrane by the RF power, which decreased the membrane spring constant significantly. The results implied that, well before the input RF power triggers self-actuation, the distortion might increase rapidly to an unacceptable level, so that the power-handling capacity of MEMS capacitive switches would be limited by intermodulation distortion instead of self-actuation.",

author = "D. Molinero and X. Luo and Y. Ning and C. Palego and J. Hwang and C.L. Goldsmith",

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AU - Molinero, D.

AU - Luo, X.

AU - Ning, Y.

AU - Palego, C.

AU - Hwang, J.

AU - Goldsmith, C.L.

PY - 2013/6/2

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N2 - ntermodulation distortion in MEMS capacitive switches was analyzed both theoretically and experimentally as a function of tone spacing and RF power. The theory and experiment consistently showed that, under high RF power, additional distortion was caused by self-heating of the switch membrane by the RF power, which decreased the membrane spring constant significantly. The results implied that, well before the input RF power triggers self-actuation, the distortion might increase rapidly to an unacceptable level, so that the power-handling capacity of MEMS capacitive switches would be limited by intermodulation distortion instead of self-actuation.

AB - ntermodulation distortion in MEMS capacitive switches was analyzed both theoretically and experimentally as a function of tone spacing and RF power. The theory and experiment consistently showed that, under high RF power, additional distortion was caused by self-heating of the switch membrane by the RF power, which decreased the membrane spring constant significantly. The results implied that, well before the input RF power triggers self-actuation, the distortion might increase rapidly to an unacceptable level, so that the power-handling capacity of MEMS capacitive switches would be limited by intermodulation distortion instead of self-actuation.

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DO - 10.1109/MWSYM.2013.6697357

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Intermodulation distortion in MEMS capacitive switches under high RF power

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