Multi-interface roughness effects on electron mobility in a Ga0.5In0.5P/GaAs multisubband coupled quantum well structure.

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	095021
Journal	Semiconductor Science and Technology
Volume	24
Issue number	9
DOIs	https://doi.org/10.1088/0268-1242/24/9/095021
Publication status	Published - 1 Sept 2009

Keywords

@article{e7afdf42d6ef4f7691c5d165e4f2408d,

title = "Multi-interface roughness effects on electron mobility in a Ga0.5In0.5P/GaAs multisubband coupled quantum well structure.",

keywords = "ENGINEERING, ELECTRICAL \& ELECTRONIC, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, CONDENSED MATTER",

author = "T. Sahu and K.A. Shore",

year = "2009",

month = sep,

day = "1",

doi = "10.1088/0268-1242/24/9/095021",

language = "English",

volume = "24",

pages = "095021",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "9",

}

TY - JOUR

T1 - Multi-interface roughness effects on electron mobility in a Ga0.5In0.5P/GaAs multisubband coupled quantum well structure.

AU - Sahu, T.

AU - Shore, K.A.

PY - 2009/9/1

Y1 - 2009/9/1

KW - ENGINEERING

KW - ELECTRICAL & ELECTRONIC

KW - MATERIALS SCIENCE

KW - MULTIDISCIPLINARY

KW - PHYSICS

KW - CONDENSED MATTER

U2 - 10.1088/0268-1242/24/9/095021

DO - 10.1088/0268-1242/24/9/095021

M3 - Article

SN - 0268-1242

VL - 24

SP - 095021

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 9

ER -