Organic bistable devices utilizing carbon nanotubes embedded in poly(methyl methacrylate)

A. Sleiman; M.F. Mabrook; R.R. Nejm; A. Ayesh; A. Al Ghaferi; M.C. Petty; D.A. Zeze

doi:10.1063/1.4737599

Organic bistable devices utilizing carbon nanotubes embedded in poly(methyl methacrylate)

A. Sleiman, M.F. Mabrook, R.R. Nejm, A. Ayesh, A. Al Ghaferi, M.C. Petty, D.A. Zeze

Research output: Contribution to journal › Article › peer-review

Abstract

The electrical and memory behavior of organic bistable memory devices in the form of metal-embedded insulator-metal (MIM) structure are described. The devices utilize layer-by-layer (LbL) deposited single walled carbon nanotubes (SWCNTs) as charge traps embedded between two polymethylmethacrylate (PMMA) insulating layers. The stack was sandwiched between two aluminium electrodes to form an Al/PMMA/SWCNTs/PMMA/Al structure. The current-voltage (I-V) characteristics of the devices exhibit electrical bistability and non-volatile memory characteristics in terms of switching between high conductive (ON) and low conductive (OFF) states. The different conductive states were programmed by application of a positive and negative voltage pulse for the ON and OFF states, respectively. A maximum ON/OFF ratio of 2 × 105 is achieved at low reading voltage of 1 V. Space-charge-limited-current (SCLC) conduction model was used to describe the carriers transport and the electrical bistability in the devices, which was attributed to the trapping and detrapping of electrons inside the SWCNTs.

Original language	English
Pages (from-to)	024509
Journal	Journal of Applied Physics
Volume	112
DOIs	https://doi.org/10.1063/1.4737599
Publication status	Published - 19 Jul 2012

Access to Document

10.1063/1.4737599

Cite this

@article{55cde4f6d24547cd80e6b715f64b81b4,

title = "Organic bistable devices utilizing carbon nanotubes embedded in poly(methyl methacrylate)",

abstract = "The electrical and memory behavior of organic bistable memory devices in the form of metal-embedded insulator-metal (MIM) structure are described. The devices utilize layer-by-layer (LbL) deposited single walled carbon nanotubes (SWCNTs) as charge traps embedded between two polymethylmethacrylate (PMMA) insulating layers. The stack was sandwiched between two aluminium electrodes to form an Al/PMMA/SWCNTs/PMMA/Al structure. The current-voltage (I-V) characteristics of the devices exhibit electrical bistability and non-volatile memory characteristics in terms of switching between high conductive (ON) and low conductive (OFF) states. The different conductive states were programmed by application of a positive and negative voltage pulse for the ON and OFF states, respectively. A maximum ON/OFF ratio of 2 × 105 is achieved at low reading voltage of 1 V. Space-charge-limited-current (SCLC) conduction model was used to describe the carriers transport and the electrical bistability in the devices, which was attributed to the trapping and detrapping of electrons inside the SWCNTs.",

author = "A. Sleiman and M.F. Mabrook and R.R. Nejm and A. Ayesh and \{Al Ghaferi\}, A. and M.C. Petty and D.A. Zeze",

year = "2012",

month = jul,

day = "19",

doi = "10.1063/1.4737599",

language = "English",

volume = "112",

pages = "024509",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Organic bistable devices utilizing carbon nanotubes embedded in poly(methyl methacrylate)

AU - Sleiman, A.

AU - Mabrook, M.F.

AU - Nejm, R.R.

AU - Ayesh, A.

AU - Al Ghaferi, A.

AU - Petty, M.C.

AU - Zeze, D.A.

PY - 2012/7/19

Y1 - 2012/7/19

N2 - The electrical and memory behavior of organic bistable memory devices in the form of metal-embedded insulator-metal (MIM) structure are described. The devices utilize layer-by-layer (LbL) deposited single walled carbon nanotubes (SWCNTs) as charge traps embedded between two polymethylmethacrylate (PMMA) insulating layers. The stack was sandwiched between two aluminium electrodes to form an Al/PMMA/SWCNTs/PMMA/Al structure. The current-voltage (I-V) characteristics of the devices exhibit electrical bistability and non-volatile memory characteristics in terms of switching between high conductive (ON) and low conductive (OFF) states. The different conductive states were programmed by application of a positive and negative voltage pulse for the ON and OFF states, respectively. A maximum ON/OFF ratio of 2 × 105 is achieved at low reading voltage of 1 V. Space-charge-limited-current (SCLC) conduction model was used to describe the carriers transport and the electrical bistability in the devices, which was attributed to the trapping and detrapping of electrons inside the SWCNTs.

AB - The electrical and memory behavior of organic bistable memory devices in the form of metal-embedded insulator-metal (MIM) structure are described. The devices utilize layer-by-layer (LbL) deposited single walled carbon nanotubes (SWCNTs) as charge traps embedded between two polymethylmethacrylate (PMMA) insulating layers. The stack was sandwiched between two aluminium electrodes to form an Al/PMMA/SWCNTs/PMMA/Al structure. The current-voltage (I-V) characteristics of the devices exhibit electrical bistability and non-volatile memory characteristics in terms of switching between high conductive (ON) and low conductive (OFF) states. The different conductive states were programmed by application of a positive and negative voltage pulse for the ON and OFF states, respectively. A maximum ON/OFF ratio of 2 × 105 is achieved at low reading voltage of 1 V. Space-charge-limited-current (SCLC) conduction model was used to describe the carriers transport and the electrical bistability in the devices, which was attributed to the trapping and detrapping of electrons inside the SWCNTs.

U2 - 10.1063/1.4737599

DO - 10.1063/1.4737599

M3 - Article

SN - 0021-8979

VL - 112

SP - 024509

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -

Organic bistable devices utilizing carbon nanotubes embedded in poly(methyl methacrylate)

Abstract

Access to Document

Fingerprint

Cite this