Power output of 650-nm self-pulsating A1GaInP laser diodes for optical storage applications

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1632-1635
Journal	IEEE Journal of Quantum Electronics
Volume	37
Issue number	12
DOIs	https://doi.org/10.1109/3.970910
Publication status	Published - 1 Dec 2001

Keywords

@article{9b4320094ff1407e90d900453987b61d,

title = "Power output of 650-nm self-pulsating A1GaInP laser diodes for optical storage applications",

keywords = "ENGINEERING, ELECTRICAL \& ELECTRONIC, PHYSICS, APPLIED",

author = "D.R. Jones and P. Rees and I. Pierce and H.D. Summers",

year = "2001",

month = dec,

day = "1",

doi = "10.1109/3.970910",

language = "English",

volume = "37",

pages = "1632--1635",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Power output of 650-nm self-pulsating A1GaInP laser diodes for optical storage applications

AU - Jones, D.R.

AU - Rees, P.

AU - Pierce, I.

AU - Summers, H.D.

PY - 2001/12/1

Y1 - 2001/12/1

KW - ENGINEERING

KW - ELECTRICAL & ELECTRONIC

KW - PHYSICS

KW - APPLIED

U2 - 10.1109/3.970910

DO - 10.1109/3.970910

M3 - Article

SN - 0018-9197

VL - 37

SP - 1632

EP - 1635

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 12

ER -