Single-walled nanotube MIS memory devices

D.T. Ashall; M. Alba-Martin; T. Firmager; J.J. Atherton; M.C. Rosamond; A.J. Gallant; M.C. Petty; A. Al Ghaferi; A. Ayesh; D. Ashall; M.F. Mabrook; D.A. Zeze

doi:10.1109/NANO.2011.6144530

Single-walled nanotube MIS memory devices

D.T. Ashall, M. Alba-Martin, T. Firmager, J.J. Atherton, M.C. Rosamond, A.J. Gallant, M.C. Petty, A. Al Ghaferi, A. Ayesh, D. Ashall, M.F. Mabrook, D.A. Zeze

Research output: Contribution to conference › Paper

Abstract

Single-Walled carbon nanotubes (SWCNTs) were embedded in hybrid Metal-Insulator-Semiconductor (MIS) memory devices using layer-by-layer (LbL) deposition with polymethylmethacrylate (PMMA) as an organic insulator. It is demonstrated that shortened SWCNTs lead to reliable and large memory windows by virtue of better encapsulation which reduces charge leakage compared with longer SWCNT devices. The capacitance-voltage (C-V) characteristics exhibit a clockwise hysteresis, indicative of electron injection into the SWCNT charge storage elements through the PMMA layer. It is also shown that devices made using sodium dodecyl sulphate (SDS)-based SWCNTs and polyethyleneimine (PEI) produce memory windows larger than 6 V, have a high charge retention of 76% and a storage density better than 2×1012/cm2.

Original language	English
Pages	991-995
DOIs	https://doi.org/10.1109/NANO.2011.6144530
Publication status	Published - 15 Aug 2011
Event	Nanotechnology (IEEE-NANO), 11th IEEE Conference, Portland OR., 15-18 August, 2011 - Duration: 3 Jan 0001 → …

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Conference	Nanotechnology (IEEE-NANO), 11th IEEE Conference, Portland OR., 15-18 August, 2011
Period	3/01/01 → …

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10.1109/NANO.2011.6144530

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Ashall, D. T., Alba-Martin, M., Firmager, T., Atherton, J. J., Rosamond, M. C., Gallant, A. J., Petty, M. C., Al Ghaferi, A., Ayesh, A., Ashall, D., Mabrook, M. F., & Zeze, D. A. (2011). Single-walled nanotube MIS memory devices. 991-995. Paper presented at Nanotechnology (IEEE-NANO), 11th IEEE Conference, Portland OR., 15-18 August, 2011. https://doi.org/10.1109/NANO.2011.6144530

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abstract = "Single-Walled carbon nanotubes (SWCNTs) were embedded in hybrid Metal-Insulator-Semiconductor (MIS) memory devices using layer-by-layer (LbL) deposition with polymethylmethacrylate (PMMA) as an organic insulator. It is demonstrated that shortened SWCNTs lead to reliable and large memory windows by virtue of better encapsulation which reduces charge leakage compared with longer SWCNT devices. The capacitance-voltage (C-V) characteristics exhibit a clockwise hysteresis, indicative of electron injection into the SWCNT charge storage elements through the PMMA layer. It is also shown that devices made using sodium dodecyl sulphate (SDS)-based SWCNTs and polyethyleneimine (PEI) produce memory windows larger than 6 V, have a high charge retention of 76\% and a storage density better than 2×1012/cm2.",

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AU - Ashall, D.T.

AU - Alba-Martin, M.

AU - Firmager, T.

AU - Atherton, J.J.

AU - Rosamond, M.C.

AU - Gallant, A.J.

AU - Petty, M.C.

AU - Al Ghaferi, A.

AU - Ayesh, A.

AU - Ashall, D.

AU - Mabrook, M.F.

AU - Zeze, D.A.

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AB - Single-Walled carbon nanotubes (SWCNTs) were embedded in hybrid Metal-Insulator-Semiconductor (MIS) memory devices using layer-by-layer (LbL) deposition with polymethylmethacrylate (PMMA) as an organic insulator. It is demonstrated that shortened SWCNTs lead to reliable and large memory windows by virtue of better encapsulation which reduces charge leakage compared with longer SWCNT devices. The capacitance-voltage (C-V) characteristics exhibit a clockwise hysteresis, indicative of electron injection into the SWCNT charge storage elements through the PMMA layer. It is also shown that devices made using sodium dodecyl sulphate (SDS)-based SWCNTs and polyethyleneimine (PEI) produce memory windows larger than 6 V, have a high charge retention of 76% and a storage density better than 2×1012/cm2.

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ER -

Single-walled nanotube MIS memory devices

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