Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures

R. Kalbitz; P. Frubing; R. Gerhard; D.M. Taylor

doi:10.1063/1.3543632

Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures

R. Kalbitz
, P. Frubing
, R. Gerhard
, D.M. Taylor

Research output: Contribution to journal › Article › peer-review

Abstract

Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) as the gate insulator. It is shown that the polarization states remain stable after poling with accumulation and depletion voltage. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flatband voltage expected during the sweep to accumulation voltages.

Original language	English
Pages (from-to)	033303
Journal	Applied Physics Letters
Volume	98
Issue number	3
DOIs	https://doi.org/10.1063/1.3543632
Publication status	Published - 1 Jan 2011

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title = "Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures",

abstract = "Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) as the gate insulator. It is shown that the polarization states remain stable after poling with accumulation and depletion voltage. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flatband voltage expected during the sweep to accumulation voltages.",

author = "R. Kalbitz and P. Frubing and R. Gerhard and D.M. Taylor",

year = "2011",

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AU - Kalbitz, R.

AU - Frubing, P.

AU - Gerhard, R.

AU - Taylor, D.M.

PY - 2011/1/1

Y1 - 2011/1/1

N2 - Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) as the gate insulator. It is shown that the polarization states remain stable after poling with accumulation and depletion voltage. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flatband voltage expected during the sweep to accumulation voltages.

AB - Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) as the gate insulator. It is shown that the polarization states remain stable after poling with accumulation and depletion voltage. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flatband voltage expected during the sweep to accumulation voltages.

U2 - 10.1063/1.3543632

DO - 10.1063/1.3543632

M3 - Article

SN - 0003-6951

VL - 98

SP - 033303

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures

Abstract

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