Abstract
The characteristics of optically induced teraherz (THz) radiation from a biased low-temperature-grown GaAs (LT-GaAs) photoconductive antenna were investigated using a femtosecond Ti:sapphire laser. The THz pulse radiation from two different LT-GaAs photoconductive antennas were compared and two kinds of THz waveform were observed. Saturation behaviour of the emission of THz radiation is observed by using a CW laser diode to optically pre-bias the emitter antenna.
| Original language | English |
|---|---|
| Pages (from-to) | 98-101 |
| Journal | IEE Proceedings: Optoelectronics |
| Volume | 151 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 26 Apr 2004 |
Keywords
- ENGINEERING
- ELECTRICAL & ELECTRONIC
- OPTICS
- TELECOMMUNICATIONS
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