The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors

E. Itoh; I. Torres; D.M. Taylor

doi:10.1143/JJAP.44.641

The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors

E. Itoh
, I. Torres
, D.M. Taylor

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	641-647
Journal	Japanese Journal of Applied Physics
Volume	44
Issue number	1B
DOIs	https://doi.org/10.1143/JJAP.44.641
Publication status	Published - 1 Jan 2005

Keywords

PHYSICS
APPLIED

Access to Document

10.1143/JJAP.44.641

Cite this

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title = "The influence of interfacial charge exchange phenomena at the insulator-semiconductor interface on the electrical properties of poly(3-hexylthiophene) based field effect transistors",

keywords = "PHYSICS, APPLIED",

author = "E. Itoh and I. Torres and D.M. Taylor",

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