Third-order nonlinearity in silicon beyond 2350 nm

Faezeh Gholami; Sanja Zlatanovic; Aleksandar Simic; Lan Liu; David Borlaug; Nikola Alic; Maziar P. Nezhad; Yeshaiahu Fainman; Stojan Radic

doi:10.1063/1.3630130

Third-order nonlinearity in silicon beyond 2350 nm

Faezeh Gholami, Sanja Zlatanovic, Aleksandar Simic, Lan Liu, David Borlaug, Nikola Alic, Maziar P. Nezhad, Yeshaiahu Fainman, Stojan Radic

School of Computer Science & Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Applied Physics Letters
Volume	99
Issue number	8
DOIs	https://doi.org/10.1063/1.3630130
Publication status	Published - 22 Aug 2011

Access to Document

10.1063/1.3630130

Cite this

@article{67505ed25ba641219b4056a7aa397f88,

title = "Third-order nonlinearity in silicon beyond 2350 nm",

author = "Faezeh Gholami and Sanja Zlatanovic and Aleksandar Simic and Lan Liu and David Borlaug and Nikola Alic and Nezhad, \{Maziar P.\} and Yeshaiahu Fainman and Stojan Radic",

year = "2011",

month = aug,

day = "22",

doi = "10.1063/1.3630130",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Third-order nonlinearity in silicon beyond 2350 nm

AU - Gholami, Faezeh

AU - Zlatanovic, Sanja

AU - Simic, Aleksandar

AU - Liu, Lan

AU - Borlaug, David

AU - Alic, Nikola

AU - Nezhad, Maziar P.

AU - Fainman, Yeshaiahu

AU - Radic, Stojan

PY - 2011/8/22

Y1 - 2011/8/22

U2 - 10.1063/1.3630130

DO - 10.1063/1.3630130

M3 - Article

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -