Wafer Bonded Subwavelength Metallo-Dielectric Laser

O. Bondarenko; A. Simic; Q. Gu; J. H. Lee; B. Slutsky; M. P. Nezhad; Y. Fainman

doi:10.1109/JPHOT.2011.2146763

Wafer Bonded Subwavelength Metallo-Dielectric Laser

O. Bondarenko, A. Simic, Q. Gu, J. H. Lee, B. Slutsky, M. P. Nezhad, Y. Fainman

School of Computer Science & Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Light sources that are compatible with the silicon photonics platform are the key elements neededfor photonicintegrated circuitson silicon.Here, wereport opticallypumped wafer bonded metallodielectric lasers, subwavelength in all three dimensions (250-nm gain core radius) operating at 77 K, as well as near-subwavelength (450-nm gain core radius) operating at room temperature.

Original language	English
Pages (from-to)	608-616
Number of pages	9
Journal	IEEE Photonics Journal
Volume	3
Issue number	3
Early online date	1 Jun 2011
DOIs	https://doi.org/10.1109/JPHOT.2011.2146763
Publication status	Published - 26 Jun 2011

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title = "Wafer Bonded Subwavelength Metallo-Dielectric Laser",

abstract = " Light sources that are compatible with the silicon photonics platform are the key elements neededfor photonicintegrated circuitson silicon.Here, wereport opticallypumped wafer bonded metallodielectric lasers, subwavelength in all three dimensions (250-nm gain core radius) operating at 77 K, as well as near-subwavelength (450-nm gain core radius) operating at room temperature.",

author = "O. Bondarenko and A. Simic and Q. Gu and Lee, \{J. H.\} and B. Slutsky and Nezhad, \{M. P.\} and Y. Fainman",

year = "2011",

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day = "26",

doi = "10.1109/JPHOT.2011.2146763",

language = "English",

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T1 - Wafer Bonded Subwavelength Metallo-Dielectric Laser

AU - Bondarenko, O.

AU - Simic, A.

AU - Gu, Q.

AU - Lee, J. H.

AU - Slutsky, B.

AU - Nezhad, M. P.

AU - Fainman, Y.

PY - 2011/6/26

Y1 - 2011/6/26

N2 - Light sources that are compatible with the silicon photonics platform are the key elements neededfor photonicintegrated circuitson silicon.Here, wereport opticallypumped wafer bonded metallodielectric lasers, subwavelength in all three dimensions (250-nm gain core radius) operating at 77 K, as well as near-subwavelength (450-nm gain core radius) operating at room temperature.

AB - Light sources that are compatible with the silicon photonics platform are the key elements neededfor photonicintegrated circuitson silicon.Here, wereport opticallypumped wafer bonded metallodielectric lasers, subwavelength in all three dimensions (250-nm gain core radius) operating at 77 K, as well as near-subwavelength (450-nm gain core radius) operating at room temperature.

U2 - 10.1109/JPHOT.2011.2146763

DO - 10.1109/JPHOT.2011.2146763

M3 - Article

SN - 1943-0655

VL - 3

SP - 608

EP - 616

JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

IS - 3

ER -

Wafer Bonded Subwavelength Metallo-Dielectric Laser

Abstract

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