Wave-Guiding Analysis of Annular Core Geometry Metal-Clad Semiconductor Nano-Lasers

Z.A. Satter; K.A. Shore; Z. Wang

doi:10.1109/JQE.2013.2291662

Wave-Guiding Analysis of Annular Core Geometry Metal-Clad Semiconductor Nano-Lasers

Z.A. Satter
, K.A. Shore
, Z. Wang

Research output: Contribution to journal › Article › peer-review

Abstract

Numerical modeling of cylindrical semiconductor nano-lasers has been undertaken accommodating local gain variations in the active region of the device. Analysis is performed using both the cylindrical transfer matrix method and the finite element method. Calculations have thereby been performed of the modal gain and the lasing condition for the device. The model has been applied to annular active core structures and a comparison has been made of the requirements for achieving lasing via the excitation of TE01 and TM01 modes. For representative structures, it is shown that TE and TM mode lasing can be supported in devices having cavity lengths in the order of 1 and 60 μm, respectively.

Original language	English
Pages (from-to)	15-22
Journal	IEEE Journal of Quantum Electronics
Volume	50
Issue number	1
DOIs	https://doi.org/10.1109/JQE.2013.2291662
Publication status	Published - 20 Nov 2013

Access to Document

10.1109/JQE.2013.2291662

Cite this

@article{c196df8e45914fd8aac20cf259f3c221,

title = "Wave-Guiding Analysis of Annular Core Geometry Metal-Clad Semiconductor Nano-Lasers",

abstract = "Numerical modeling of cylindrical semiconductor nano-lasers has been undertaken accommodating local gain variations in the active region of the device. Analysis is performed using both the cylindrical transfer matrix method and the finite element method. Calculations have thereby been performed of the modal gain and the lasing condition for the device. The model has been applied to annular active core structures and a comparison has been made of the requirements for achieving lasing via the excitation of TE01 and TM01 modes. For representative structures, it is shown that TE and TM mode lasing can be supported in devices having cavity lengths in the order of 1 and 60 μm, respectively.",

author = "Z.A. Satter and K.A. Shore and Z. Wang",

year = "2013",

month = nov,

day = "20",

doi = "10.1109/JQE.2013.2291662",

language = "English",

volume = "50",

pages = "15--22",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Wave-Guiding Analysis of Annular Core Geometry Metal-Clad Semiconductor Nano-Lasers

AU - Satter, Z.A.

AU - Shore, K.A.

AU - Wang, Z.

PY - 2013/11/20

Y1 - 2013/11/20

N2 - Numerical modeling of cylindrical semiconductor nano-lasers has been undertaken accommodating local gain variations in the active region of the device. Analysis is performed using both the cylindrical transfer matrix method and the finite element method. Calculations have thereby been performed of the modal gain and the lasing condition for the device. The model has been applied to annular active core structures and a comparison has been made of the requirements for achieving lasing via the excitation of TE01 and TM01 modes. For representative structures, it is shown that TE and TM mode lasing can be supported in devices having cavity lengths in the order of 1 and 60 μm, respectively.

AB - Numerical modeling of cylindrical semiconductor nano-lasers has been undertaken accommodating local gain variations in the active region of the device. Analysis is performed using both the cylindrical transfer matrix method and the finite element method. Calculations have thereby been performed of the modal gain and the lasing condition for the device. The model has been applied to annular active core structures and a comparison has been made of the requirements for achieving lasing via the excitation of TE01 and TM01 modes. For representative structures, it is shown that TE and TM mode lasing can be supported in devices having cavity lengths in the order of 1 and 60 μm, respectively.

U2 - 10.1109/JQE.2013.2291662

DO - 10.1109/JQE.2013.2291662

M3 - Article

SN - 0018-9197

VL - 50

SP - 15

EP - 22

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 1

ER -

Wave-Guiding Analysis of Annular Core Geometry Metal-Clad Semiconductor Nano-Lasers

Abstract

Access to Document

Fingerprint

Cite this