This project entailed the investigation of laser light reflection and scattering from thin film surfaces. To carry out this research, two testbeds, one ex situ and one in situ, were constructed to study two and three dimensional growth in II-VI semiconductor films. The instruments were tested by analysis of Metal Organic Chemical Vapour Deposition [MOCVD] growth ofCdTe and/or CdS onto either ITO/glass or Si(00l) substrates, using dimethylcadmium (DMCd), with the addition of diisopropyltellurium (DiPTe) and/or di-tert-butylsulphur (DtBS). An Angle Resolved Scattering [ARS] monitor was used ex situ, and the ARS distributions recorded. These results were correlated against Atomic Force Microscopy image roughness analysis. The findings were verified with angle resolved scattering theory, and were found to be in good agreement. A combined dual wavelength Reflectance Interferometer and Laser Light Profile [LLP] system was used to record 2D&3D growth data in real-time, in situ. Traditional single wavelength and the dual wavelength interferometer data were compared, and were found to agree well, although the fitted values for the extinction coefficient were consistently double the referenced value. In the LLP study presented here, the general behaviour of the new technique of laser light profiling was shown, and a model was presented. Again, the data were found to correspond well to theory. The recording of the LLP data has been possible by redesign of the combined instrument, where the detection electronics were changed to a CCD-array. This also resulted in a much simpler instrument, as the detection can be carried out in one single detector, by matching laser wavelengths with the pixel colour. Throughout the dual wavelength measurements, a wavelength dependent interfero-meter response time has been observed during nucleation. The longer wavelength (655nm) bas shown a lag in response, compared to the shorter wavelength (532nm).