1. Cyhoeddwyd

   Floating-gate memory based on an organic metal-insulator-semiconductor capacitor.

   William, S., Mabrook, M. F. & Taylor, D. M., 31 Awst 2009, Yn: Applied Physics Letters. 95, 9, t. 093309

   Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

2. Cyhoeddwyd

   The morphology and electrical conductivity of single-wall carbon nanotube thin films prepared by the Langmuir-Blodgett technique.

   Venet, C., Pearson, C., Jombert, A. S., Mabrook, M. F., Zeze, D. A. & Petty, M. C., 5 Chwef 2010, Yn: Colloids and Surfaces A: Physicochemical and Engineering Aspects. 354, 1-3, t. 113-117

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3. Cyhoeddwyd

   Gold nanoparticles as a floating gate in Pentacene/PVP based MIS memory devices

   Sleiman, A., Albuquerque, A., Fakher, S. J. & Mabrook, M., 20 Awst 2012, t. 1-5.

   Allbwn ymchwil: Cyfraniad at gynhadledd › Papur

4. Cyhoeddwyd

   Two-terminal organic nonvolatile memory (ONVM) devices

   Sleiman, A., Sayers, P., Zeze, D. A. & Mabrook, M., 2015, Handbook of Flexible Organic Electronics: Materials, Manufacturing and Applications. Logothetidis, S. (gol.). Woodhead Publishing Ltd, t. 413-428

   Allbwn ymchwil: Pennod mewn Llyfr/Adroddiad/Trafodion Cynhadledd › Pennod

5. Cyhoeddwyd

   Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

   Sleiman, A., Rosamond, M. C., Martin, M. A., Ayesh, A., Al Ghaferi, A., Gallant, A. J., Mabrook, M. F. & Zeze, D. A., 9 Ion 2012, Yn: Applied Physics Letters. 100, 2

   Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

6. Cyhoeddwyd

   Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures

   Sleiman, A., Sayers, P. W. & Mabrook, M. F., 1 Ebr 2013, Yn: Journal of Applied Physics. 113, 16, t. 164506 - 164506-5

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7. Cyhoeddwyd

   Organic bistable devices utilizing carbon nanotubes embedded in poly(methyl methacrylate)

   Sleiman, A., Mabrook, M. F., Nejm, R. R., Ayesh, A., Al Ghaferi, A., Petty, M. C. & Zeze, D. A., 19 Gorff 2012, Yn: Journal of Applied Physics. 112, t. 024509

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8. Cyhoeddwyd

   Graphene oxide-based non-volatile organic field effect memory transistors

   Sayers, P. W., Alaabdlqader, H. S., Sleiman, A., Sayers, P. & Mabrook, M. F., 23 Ion 2015, Yn: IET Circuits, Devices and Systems. 9, 1, t. 67-71

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9. Cyhoeddwyd

   Electronic memory device based on a single-layer fluorene-containing organic thin film.

   Pearson, C., Ahn, J. H., Mabrook, M. F., Zeze, D. A., Petty, M. C., Kamtekar, K. T., Wang, C., Bryce, M. R., Dimitrakis, P. & Tsoukalas, D., 17 Medi 2007, Yn: Applied Physics Letters. 91, 12, t. 123506

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10. Cyhoeddwyd

    Electrical characteristics of hybrid-organic memory devices based on Au nanoparticles

    Nejm, R. R., Ayesh, A. I., Zeze, D. A., Sleiman, A., Mabrook, M. F., Al-Ghaferi, A. & Hussein, M., 6 Maw 2015, Yn: Journal of Electronic Materials. 44, 8, t. 2835-2841

    Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid