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A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

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A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications. / Rajbhandari, Sujan; McKendry, J. J. D.; Herrnsdorf, J. et al.
Yn: Semiconductor Science and Technology, Cyfrol 32, Rhif 2, 04.01.2017.

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

HarvardHarvard

Rajbhandari, S, McKendry, JJD, Herrnsdorf, J, Chun, H, Faulkner, G, Haas, H, Watson, IM, O'Brien, D & Dawson, MD 2017, 'A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications', Semiconductor Science and Technology, cyfrol. 32, rhif 2. https://doi.org/10.1088/1361-6641/32/2/023001

APA

Rajbhandari, S., McKendry, J. J. D., Herrnsdorf, J., Chun, H., Faulkner, G., Haas, H., Watson, I. M., O'Brien, D., & Dawson, M. D. (2017). A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications. Semiconductor Science and Technology, 32(2). https://doi.org/10.1088/1361-6641/32/2/023001

CBE

Rajbhandari S, McKendry JJD, Herrnsdorf J, Chun H, Faulkner G, Haas H, Watson IM, O'Brien D, Dawson MD. 2017. A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications. Semiconductor Science and Technology. 32(2). https://doi.org/10.1088/1361-6641/32/2/023001

MLA

Rajbhandari, Sujan et al. "A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications". Semiconductor Science and Technology. 2017. 32(2). https://doi.org/10.1088/1361-6641/32/2/023001

VancouverVancouver

Rajbhandari S, McKendry JJD, Herrnsdorf J, Chun H, Faulkner G, Haas H et al. A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications. Semiconductor Science and Technology. 2017 Ion 4;32(2). doi: 10.1088/1361-6641/32/2/023001

Author

Rajbhandari, Sujan ; McKendry, J. J. D. ; Herrnsdorf, J. et al. / A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications. Yn: Semiconductor Science and Technology. 2017 ; Cyfrol 32, Rhif 2.

RIS

TY - JOUR

T1 - A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications

AU - Rajbhandari, Sujan

AU - McKendry, J. J. D.

AU - Herrnsdorf, J.

AU - Chun, H.

AU - Faulkner, G.

AU - Haas, H.

AU - Watson, I. M.

AU - O'Brien, D.

AU - Dawson, M. D.

N1 - The full text is not available on the repository until the 4th of January 2018.

PY - 2017/1/4

Y1 - 2017/1/4

N2 - The field of visible light communications (VLC) has gained significant interest over the last decade, in both fibre and free-space embodiments. In fibre systems, the availability of low cost polymer optical fibre (POF) that is compatible with visible data communications has been a key enabler. In free-space applications, the availability of hundreds of THz of the unregulated spectrum makes VLC attractive for wireless communications. This paper provides an overview of the recent developments in VLC systems based on gallium nitride (GaN) light-emitting diodes (LEDs), covering aspects from sources to systems. The state-of-the-art technology enabling bandwidth of GaN LEDs in the range of >400 MHz is explored. Furthermore, advances in key technologies, including advanced modulation, equalisation, and multiplexing that have enabled free-space VLC data rates beyond 10 Gb s−1 are also outlined.

AB - The field of visible light communications (VLC) has gained significant interest over the last decade, in both fibre and free-space embodiments. In fibre systems, the availability of low cost polymer optical fibre (POF) that is compatible with visible data communications has been a key enabler. In free-space applications, the availability of hundreds of THz of the unregulated spectrum makes VLC attractive for wireless communications. This paper provides an overview of the recent developments in VLC systems based on gallium nitride (GaN) light-emitting diodes (LEDs), covering aspects from sources to systems. The state-of-the-art technology enabling bandwidth of GaN LEDs in the range of >400 MHz is explored. Furthermore, advances in key technologies, including advanced modulation, equalisation, and multiplexing that have enabled free-space VLC data rates beyond 10 Gb s−1 are also outlined.

U2 - 10.1088/1361-6641/32/2/023001

DO - 10.1088/1361-6641/32/2/023001

M3 - Article

VL - 32

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 2

ER -