A study of arsenic dopant concentration and activity as a function of growth conditions in polycrystalline MOCVD-grown CdTe
Allbwn ymchwil: Cyfraniad at gynhadledd › Papur
StandardStandard
A study of arsenic dopant concentration and activity as a function of growth conditions in polycrystalline MOCVD-grown CdTe. / Stafford, A.; Irvine, S.J.; Durose, K. et al.
2003. B1.5.
2003. B1.5.
Allbwn ymchwil: Cyfraniad at gynhadledd › Papur
HarvardHarvard
Stafford, A, Irvine, SJ, Durose, K, Zoppi, G, Noufi, R (gol.), Shafarman, WN (gol.), Cahen, D (gol.) & Stolt, L (gol.) 2003, 'A study of arsenic dopant concentration and activity as a function of growth conditions in polycrystalline MOCVD-grown CdTe', tt. B1.5.
APA
Stafford, A., Irvine, S. J., Durose, K., Zoppi, G., Noufi, R. (Gol.), Shafarman, W. N. (Gol.), Cahen, D. (Gol.), & Stolt, L. (Gol.) (2003). A study of arsenic dopant concentration and activity as a function of growth conditions in polycrystalline MOCVD-grown CdTe. B1.5.
CBE
Stafford A, Irvine SJ, Durose K, Zoppi G, Noufi R, Shafarman WN, Cahen D, Stolt L, gol. 2003. A study of arsenic dopant concentration and activity as a function of growth conditions in polycrystalline MOCVD-grown CdTe.
MLA
Stafford, A. et al. A study of arsenic dopant concentration and activity as a function of growth conditions in polycrystalline MOCVD-grown CdTe. Papur, 2003.
VancouverVancouver
Stafford A, Irvine SJ, Durose K, Zoppi G, Noufi R, (ed.), Shafarman WN, (ed.) et al.. A study of arsenic dopant concentration and activity as a function of growth conditions in polycrystalline MOCVD-grown CdTe. 2003.
Author
RIS
TY - CONF
T1 - A study of arsenic dopant concentration and activity as a function of growth conditions in polycrystalline MOCVD-grown CdTe
AU - Stafford, A.
AU - Irvine, S.J.
AU - Durose, K.
AU - Zoppi, G.
A2 - Noufi, R.
A2 - Shafarman, W.N.
A2 - Cahen, D.
A2 - Stolt, L.
PY - 2003/1/1
Y1 - 2003/1/1
M3 - Paper
SP - B1.5
ER -