Charge storage in pentacene/polymethylmethacrylate memory devices.

Allbwn ymchwil: Cyfraniad at gyfnodolynErthygladolygiad gan gymheiriaid

StandardStandard

Charge storage in pentacene/polymethylmethacrylate memory devices. / Mabrook, M.F.; Youngjun, Y.; Pearson, C. et al.
Yn: IEEE Electron Device Letters, Cyfrol 30, Rhif 6, 01.06.2009, t. 632-634.

Allbwn ymchwil: Cyfraniad at gyfnodolynErthygladolygiad gan gymheiriaid

HarvardHarvard

Mabrook, MF, Youngjun, Y, Pearson, C, Zeze, DA & Petty, MC 2009, 'Charge storage in pentacene/polymethylmethacrylate memory devices.', IEEE Electron Device Letters, cyfrol. 30, rhif 6, tt. 632-634. https://doi.org/10.1109/led.2009.2018128

APA

Mabrook, M. F., Youngjun, Y., Pearson, C., Zeze, D. A., & Petty, M. C. (2009). Charge storage in pentacene/polymethylmethacrylate memory devices. IEEE Electron Device Letters, 30(6), 632-634. https://doi.org/10.1109/led.2009.2018128

CBE

Mabrook MF, Youngjun Y, Pearson C, Zeze DA, Petty MC. 2009. Charge storage in pentacene/polymethylmethacrylate memory devices. IEEE Electron Device Letters. 30(6):632-634. https://doi.org/10.1109/led.2009.2018128

MLA

VancouverVancouver

Mabrook MF, Youngjun Y, Pearson C, Zeze DA, Petty MC. Charge storage in pentacene/polymethylmethacrylate memory devices. IEEE Electron Device Letters. 2009 Meh 1;30(6):632-634. doi: 10.1109/led.2009.2018128

Author

Mabrook, M.F. ; Youngjun, Y. ; Pearson, C. et al. / Charge storage in pentacene/polymethylmethacrylate memory devices. Yn: IEEE Electron Device Letters. 2009 ; Cyfrol 30, Rhif 6. tt. 632-634.

RIS

TY - JOUR

T1 - Charge storage in pentacene/polymethylmethacrylate memory devices.

AU - Mabrook, M.F.

AU - Youngjun, Y.

AU - Pearson, C.

AU - Zeze, D.A.

AU - Petty, M.C.

PY - 2009/6/1

Y1 - 2009/6/1

KW - ENGINEERING

KW - ELECTRICAL & ELECTRONIC

U2 - 10.1109/led.2009.2018128

DO - 10.1109/led.2009.2018128

M3 - Article

VL - 30

SP - 632

EP - 634

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 6

ER -