Porth Ymchwil

CO2 laser micromachining of nanocrystalline diamond films grown on doped silicon substrates

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

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CO2 laser micromachining of nanocrystalline diamond films grown on doped silicon substrates. / Richter, Jens; Abdou, Aly; Williams, Oliver A. et al.
Yn: Optical Materials Express, Cyfrol 6, Rhif 12, 23.11.2016, t. 3916-3926.

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

HarvardHarvard

Richter, J, Abdou, A, Williams, OA, Witzens, J & Nezhad, MP 2016, 'CO2 laser micromachining of nanocrystalline diamond films grown on doped silicon substrates', Optical Materials Express, cyfrol. 6, rhif 12, tt. 3916-3926. https://doi.org/10.1364/OME.6.003916

APA

Richter, J., Abdou, A., Williams, O. A., Witzens, J., & Nezhad, M. P. (2016). CO2 laser micromachining of nanocrystalline diamond films grown on doped silicon substrates. Optical Materials Express, 6(12), 3916-3926. https://doi.org/10.1364/OME.6.003916

CBE

Richter J, Abdou A, Williams OA, Witzens J, Nezhad MP. 2016. CO2 laser micromachining of nanocrystalline diamond films grown on doped silicon substrates. Optical Materials Express. 6(12):3916-3926. https://doi.org/10.1364/OME.6.003916

MLA

Richter, Jens et al. "CO2 laser micromachining of nanocrystalline diamond films grown on doped silicon substrates". Optical Materials Express. 2016, 6(12). 3916-3926. https://doi.org/10.1364/OME.6.003916

VancouverVancouver

Richter J, Abdou A, Williams OA, Witzens J, Nezhad MP. CO2 laser micromachining of nanocrystalline diamond films grown on doped silicon substrates. Optical Materials Express. 2016 Tach 23;6(12):3916-3926. doi: 10.1364/OME.6.003916

Author

Richter, Jens ; Abdou, Aly ; Williams, Oliver A. et al. / CO2 laser micromachining of nanocrystalline diamond films grown on doped silicon substrates. Yn: Optical Materials Express. 2016 ; Cyfrol 6, Rhif 12. tt. 3916-3926.

RIS

TY - JOUR

T1 - CO2 laser micromachining of nanocrystalline diamond films grown on doped silicon substrates

AU - Richter, Jens

AU - Abdou, Aly

AU - Williams, Oliver A.

AU - Witzens, Jeremy

AU - Nezhad, Maziar P.

PY - 2016/11/23

Y1 - 2016/11/23

N2 - We demonstrate that nanocrystalline diamond films grown on highly doped silicon substrates can be patterned using a CO2 laser operating at a wavelength of 10.6 μm, where both low doped silicon and diamond exhibit negligible optical absorption. The patterning is initiated by free carrier absorption in the silicon substrate and further enhanced by the thermal runaway effect, which results in surface heating in the silicon substrate and subsequent thermal ablation of the diamond film in an oxygen rich atmosphere. Using this approach, micron-scale grating and dot patterns are patterned in thin film diamond. The localized heating is simulated and analyzed using concurrent optical and thermal finite element modelling. The laser patterning method described here offers a cost effective and rapid solution for micro-structuring diamond films.

AB - We demonstrate that nanocrystalline diamond films grown on highly doped silicon substrates can be patterned using a CO2 laser operating at a wavelength of 10.6 μm, where both low doped silicon and diamond exhibit negligible optical absorption. The patterning is initiated by free carrier absorption in the silicon substrate and further enhanced by the thermal runaway effect, which results in surface heating in the silicon substrate and subsequent thermal ablation of the diamond film in an oxygen rich atmosphere. Using this approach, micron-scale grating and dot patterns are patterned in thin film diamond. The localized heating is simulated and analyzed using concurrent optical and thermal finite element modelling. The laser patterning method described here offers a cost effective and rapid solution for micro-structuring diamond films.

U2 - 10.1364/OME.6.003916

DO - 10.1364/OME.6.003916

M3 - Article

VL - 6

SP - 3916

EP - 3926

JO - Optical Materials Express

JF - Optical Materials Express

SN - 2159-3930

IS - 12

ER -