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Design of Room Temperature Electrically Pumped Visible Semiconductor Nanolasers. / Fan, Yuanlong; Shore, K. Alan.

Yn: IEEE Journal of Quantum Electronics, Cyfrol 54, Rhif 5, 2000907, 10.2018.

Allbwn ymchwil: Cyfraniad at gyfnodolynErthygl

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TY - JOUR

T1 - Design of Room Temperature Electrically Pumped Visible Semiconductor Nanolasers

AU - Fan, Yuanlong

AU - Shore, K. Alan

PY - 2018/10

Y1 - 2018/10

N2 - This paper presents a comprehensive theoretical study of the optical and thermal properties of an electrically pumped semiconductor nanolaser (SNL) having an GaN/(InGaN/GaN MQWs)/GaN core shell structure. Numerical results show that the lasing whispering-gallery mode has a threshold gain of 413 cm −1 . Furthermore, it is shown that when it is operated well-above threshold, the device temperature increases by only 22 K above an ambient temperature of 300 K. These promising results are attributed to the strong mode confinement in the active region and the good thermal properties of the material system of the proposed structure. The results presented in this paper offer guidelines for fabrication of electrically pumped room temperature continuous wave SNL operating in the visible spectral region.

AB - This paper presents a comprehensive theoretical study of the optical and thermal properties of an electrically pumped semiconductor nanolaser (SNL) having an GaN/(InGaN/GaN MQWs)/GaN core shell structure. Numerical results show that the lasing whispering-gallery mode has a threshold gain of 413 cm −1 . Furthermore, it is shown that when it is operated well-above threshold, the device temperature increases by only 22 K above an ambient temperature of 300 K. These promising results are attributed to the strong mode confinement in the active region and the good thermal properties of the material system of the proposed structure. The results presented in this paper offer guidelines for fabrication of electrically pumped room temperature continuous wave SNL operating in the visible spectral region.

U2 - 10.1109/JQE.2018.2869332

DO - 10.1109/JQE.2018.2869332

M3 - Article

VL - 54

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 5

M1 - 2000907

ER -