Porth Ymchwil

Electrical behavior of memory devices based on fluorene-containing organic thin films.

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

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Electrical behavior of memory devices based on fluorene-containing organic thin films. / Dimitrakis, P.; Normand, P.; Tsoukalas, D. et al.
Yn: Journal of Applied Physics, Cyfrol 104, Rhif 4, 15.08.2008, t. 044510.

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

HarvardHarvard

Dimitrakis, P, Normand, P, Tsoukalas, D, Pearson, C, Ahn, JH, Mabrook, MF, Zeze, DA, Petty, MC, Kamtekar, KT, Wang, C, Bryce, MR & Green, M 2008, 'Electrical behavior of memory devices based on fluorene-containing organic thin films.', Journal of Applied Physics, cyfrol. 104, rhif 4, tt. 044510. https://doi.org/10.1063/1.2968551

APA

Dimitrakis, P., Normand, P., Tsoukalas, D., Pearson, C., Ahn, J. H., Mabrook, M. F., Zeze, D. A., Petty, M. C., Kamtekar, K. T., Wang, C., Bryce, M. R., & Green, M. (2008). Electrical behavior of memory devices based on fluorene-containing organic thin films. Journal of Applied Physics, 104(4), 044510. https://doi.org/10.1063/1.2968551

CBE

Dimitrakis P, Normand P, Tsoukalas D, Pearson C, Ahn JH, Mabrook MF, Zeze DA, Petty MC, Kamtekar KT, Wang C, et al. 2008. Electrical behavior of memory devices based on fluorene-containing organic thin films. Journal of Applied Physics. 104(4):044510. https://doi.org/10.1063/1.2968551

MLA

Dimitrakis, P. et al. "Electrical behavior of memory devices based on fluorene-containing organic thin films.". Journal of Applied Physics. 2008, 104(4). 044510. https://doi.org/10.1063/1.2968551

VancouverVancouver

Dimitrakis P, Normand P, Tsoukalas D, Pearson C, Ahn JH, Mabrook MF et al. Electrical behavior of memory devices based on fluorene-containing organic thin films. Journal of Applied Physics. 2008 Awst 15;104(4):044510. doi: 10.1063/1.2968551

Author

Dimitrakis, P. ; Normand, P. ; Tsoukalas, D. et al. / Electrical behavior of memory devices based on fluorene-containing organic thin films. Yn: Journal of Applied Physics. 2008 ; Cyfrol 104, Rhif 4. tt. 044510.

RIS

TY - JOUR

T1 - Electrical behavior of memory devices based on fluorene-containing organic thin films.

AU - Dimitrakis, P.

AU - Normand, P.

AU - Tsoukalas, D.

AU - Pearson, C.

AU - Ahn, J.H.

AU - Mabrook, M.F.

AU - Zeze, D.A.

AU - Petty, M.C.

AU - Kamtekar, K.T.

AU - Wang, C.

AU - Bryce, M.R.

AU - Green, M.

PY - 2008/8/15

Y1 - 2008/8/15

KW - PHYSICS

KW - APPLIED

U2 - 10.1063/1.2968551

DO - 10.1063/1.2968551

M3 - Article

VL - 104

SP - 044510

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 4

ER -