StandardStandard

Electrical characteristics of highly strained InGaAs/InAlAs 2 um quantum cascade light emitting devices. / Banerjee, S.; Shore, K.A.; Mitchell, C.J. et al.
2004. Papur a gyflwynwyd yn CLEO/IQEC, San Francisco, CA, USA.

Allbwn ymchwil: Cyfraniad at gynhadleddPapur

HarvardHarvard

Banerjee, S, Shore, KA, Mitchell, CJ, Sly, JL & Missous, M 2004, 'Electrical characteristics of highly strained InGaAs/InAlAs 2 um quantum cascade light emitting devices', Papur a gyflwynwyd yn CLEO/IQEC, San Francisco, CA, USA, 3/01/01.

APA

Banerjee, S., Shore, K. A., Mitchell, C. J., Sly, J. L., & Missous, M. (2004). Electrical characteristics of highly strained InGaAs/InAlAs 2 um quantum cascade light emitting devices. Papur a gyflwynwyd yn CLEO/IQEC, San Francisco, CA, USA.

CBE

Banerjee S, Shore KA, Mitchell CJ, Sly JL, Missous M. 2004. Electrical characteristics of highly strained InGaAs/InAlAs 2 um quantum cascade light emitting devices. Papur a gyflwynwyd yn CLEO/IQEC, San Francisco, CA, USA.

MLA

Banerjee, S. et al. Electrical characteristics of highly strained InGaAs/InAlAs 2 um quantum cascade light emitting devices. CLEO/IQEC, San Francisco, CA, USA, 03 Ion 0001, Papur, 2004.

VancouverVancouver

Banerjee S, Shore KA, Mitchell CJ, Sly JL, Missous M. Electrical characteristics of highly strained InGaAs/InAlAs 2 um quantum cascade light emitting devices. 2004. Papur a gyflwynwyd yn CLEO/IQEC, San Francisco, CA, USA.

Author

Banerjee, S. ; Shore, K.A. ; Mitchell, C.J. et al. / Electrical characteristics of highly strained InGaAs/InAlAs 2 um quantum cascade light emitting devices. Papur a gyflwynwyd yn CLEO/IQEC, San Francisco, CA, USA.

RIS

TY - CONF

T1 - Electrical characteristics of highly strained InGaAs/InAlAs 2 um quantum cascade light emitting devices

AU - Banerjee, S.

AU - Shore, K.A.

AU - Mitchell, C.J.

AU - Sly, J.L.

AU - Missous, M.

PY - 2004/5/1

Y1 - 2004/5/1

M3 - Paper

T2 - CLEO/IQEC, San Francisco, CA, USA

Y2 - 3 January 0001

ER -