Electrical characteristics of highly strained InGaAs/InAlAs 2 um quantum cascade light emitting devices
Allbwn ymchwil: Cyfraniad at gynhadledd › Papur
StandardStandard
Electrical characteristics of highly strained InGaAs/InAlAs 2 um quantum cascade light emitting devices. / Banerjee, S.; Shore, K.A.; Mitchell, C.J. et al.
2004. Papur a gyflwynwyd yn CLEO/IQEC, San Francisco, CA, USA.
2004. Papur a gyflwynwyd yn CLEO/IQEC, San Francisco, CA, USA.
Allbwn ymchwil: Cyfraniad at gynhadledd › Papur
HarvardHarvard
Banerjee, S, Shore, KA, Mitchell, CJ, Sly, JL & Missous, M 2004, 'Electrical characteristics of highly strained InGaAs/InAlAs 2 um quantum cascade light emitting devices', Papur a gyflwynwyd yn CLEO/IQEC, San Francisco, CA, USA, 3/01/01.
APA
Banerjee, S., Shore, K. A., Mitchell, C. J., Sly, J. L., & Missous, M. (2004). Electrical characteristics of highly strained InGaAs/InAlAs 2 um quantum cascade light emitting devices. Papur a gyflwynwyd yn CLEO/IQEC, San Francisco, CA, USA.
CBE
Banerjee S, Shore KA, Mitchell CJ, Sly JL, Missous M. 2004. Electrical characteristics of highly strained InGaAs/InAlAs 2 um quantum cascade light emitting devices. Papur a gyflwynwyd yn CLEO/IQEC, San Francisco, CA, USA.
MLA
Banerjee, S. et al. Electrical characteristics of highly strained InGaAs/InAlAs 2 um quantum cascade light emitting devices. CLEO/IQEC, San Francisco, CA, USA, 03 Ion 0001, Papur, 2004.
VancouverVancouver
Banerjee S, Shore KA, Mitchell CJ, Sly JL, Missous M. Electrical characteristics of highly strained InGaAs/InAlAs 2 um quantum cascade light emitting devices. 2004. Papur a gyflwynwyd yn CLEO/IQEC, San Francisco, CA, USA.
Author
RIS
TY - CONF
T1 - Electrical characteristics of highly strained InGaAs/InAlAs 2 um quantum cascade light emitting devices
AU - Banerjee, S.
AU - Shore, K.A.
AU - Mitchell, C.J.
AU - Sly, J.L.
AU - Missous, M.
PY - 2004/5/1
Y1 - 2004/5/1
M3 - Paper
T2 - CLEO/IQEC, San Francisco, CA, USA
Y2 - 3 January 0001
ER -