Porth Ymchwil

Electrostatics of partially gated carbon nanotube FETs.

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

StandardStandard

Electrostatics of partially gated carbon nanotube FETs. / Clifford, J.P.; John, D.L.; Castro, L.C. et al.
Yn: IEEE Transactions On Nanotechnology, Cyfrol 3, Rhif 2, 01.06.2004, t. 281-286.

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

HarvardHarvard

Clifford, JP, John, DL, Castro, LC & Pulfrey, DL 2004, 'Electrostatics of partially gated carbon nanotube FETs.', IEEE Transactions On Nanotechnology, cyfrol. 3, rhif 2, tt. 281-286. https://doi.org/10.1109/TNANO.2004.828539

APA

Clifford, J. P., John, D. L., Castro, L. C., & Pulfrey, D. L. (2004). Electrostatics of partially gated carbon nanotube FETs. IEEE Transactions On Nanotechnology, 3(2), 281-286. https://doi.org/10.1109/TNANO.2004.828539

CBE

Clifford JP, John DL, Castro LC, Pulfrey DL. 2004. Electrostatics of partially gated carbon nanotube FETs. IEEE Transactions On Nanotechnology. 3(2):281-286. https://doi.org/10.1109/TNANO.2004.828539

MLA

Clifford, J.P. et al. "Electrostatics of partially gated carbon nanotube FETs.". IEEE Transactions On Nanotechnology. 2004, 3(2). 281-286. https://doi.org/10.1109/TNANO.2004.828539

VancouverVancouver

Clifford JP, John DL, Castro LC, Pulfrey DL. Electrostatics of partially gated carbon nanotube FETs. IEEE Transactions On Nanotechnology. 2004 Meh 1;3(2):281-286. doi: 10.1109/TNANO.2004.828539

Author

Clifford, J.P. ; John, D.L. ; Castro, L.C. et al. / Electrostatics of partially gated carbon nanotube FETs. Yn: IEEE Transactions On Nanotechnology. 2004 ; Cyfrol 3, Rhif 2. tt. 281-286.

RIS

TY - JOUR

T1 - Electrostatics of partially gated carbon nanotube FETs.

AU - Clifford, J.P.

AU - John, D.L.

AU - Castro, L.C.

AU - Pulfrey, D.L.

PY - 2004/6/1

Y1 - 2004/6/1

KW - ENGINEERING

KW - ELECTRICAL & ELECTRONIC

KW - MATERIALS SCIENCE

KW - MULTIDISCIPLINARY

KW - NANOSCIENCE & NANOTECHNOLOGY

KW - PHYSICS

KW - APPLIED

U2 - 10.1109/TNANO.2004.828539

DO - 10.1109/TNANO.2004.828539

M3 - Article

VL - 3

SP - 281

EP - 286

JO - IEEE Transactions On Nanotechnology

JF - IEEE Transactions On Nanotechnology

SN - 1536-125X

IS - 2

ER -