Floating-gate memory based on an organic metal-insulator-semiconductor capacitor.
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
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Floating-gate memory based on an organic metal-insulator-semiconductor capacitor. / William, S.; Mabrook, M.F.; Taylor, D.M.
Yn: Applied Physics Letters, Cyfrol 95, Rhif 9, 31.08.2009, t. 093309.
Yn: Applied Physics Letters, Cyfrol 95, Rhif 9, 31.08.2009, t. 093309.
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
HarvardHarvard
William, S, Mabrook, MF & Taylor, DM 2009, 'Floating-gate memory based on an organic metal-insulator-semiconductor capacitor.', Applied Physics Letters, cyfrol. 95, rhif 9, tt. 093309. https://doi.org/10.1063/1.3223606
APA
William, S., Mabrook, M. F., & Taylor, D. M. (2009). Floating-gate memory based on an organic metal-insulator-semiconductor capacitor. Applied Physics Letters, 95(9), 093309. https://doi.org/10.1063/1.3223606
CBE
William S, Mabrook MF, Taylor DM. 2009. Floating-gate memory based on an organic metal-insulator-semiconductor capacitor. Applied Physics Letters. 95(9):093309. https://doi.org/10.1063/1.3223606
MLA
William, S., M.F. Mabrook, a D.M. Taylor. "Floating-gate memory based on an organic metal-insulator-semiconductor capacitor.". Applied Physics Letters. 2009, 95(9). 093309. https://doi.org/10.1063/1.3223606
VancouverVancouver
William S, Mabrook MF, Taylor DM. Floating-gate memory based on an organic metal-insulator-semiconductor capacitor. Applied Physics Letters. 2009 Awst 31;95(9):093309. doi: 10.1063/1.3223606
Author
RIS
TY - JOUR
T1 - Floating-gate memory based on an organic metal-insulator-semiconductor capacitor.
AU - William, S.
AU - Mabrook, M.F.
AU - Taylor, D.M.
PY - 2009/8/31
Y1 - 2009/8/31
KW - PHYSICS
KW - APPLIED
U2 - 10.1063/1.3223606
DO - 10.1063/1.3223606
M3 - Article
VL - 95
SP - 093309
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 9
ER -