Grain and crystal texture properties of absorber layers in MOCVD-grown CdTe/CdS solar cells

Allbwn ymchwil: Cyfraniad at gyfnodolynErthygladolygiad gan gymheiriaid

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Grain and crystal texture properties of absorber layers in MOCVD-grown CdTe/CdS solar cells. / Zoppi, G.; Durose, K.; Irvine, S.J. et al.
Yn: Semiconductor Science and Technology, Cyfrol 21, Rhif 6, 19.04.2006, t. 763-770.

Allbwn ymchwil: Cyfraniad at gyfnodolynErthygladolygiad gan gymheiriaid

HarvardHarvard

Zoppi, G, Durose, K, Irvine, SJ & Barrioz, V 2006, 'Grain and crystal texture properties of absorber layers in MOCVD-grown CdTe/CdS solar cells', Semiconductor Science and Technology, cyfrol. 21, rhif 6, tt. 763-770. https://doi.org/10.1088/0268-1242/21/6/009

APA

Zoppi, G., Durose, K., Irvine, S. J., & Barrioz, V. (2006). Grain and crystal texture properties of absorber layers in MOCVD-grown CdTe/CdS solar cells. Semiconductor Science and Technology, 21(6), 763-770. https://doi.org/10.1088/0268-1242/21/6/009

CBE

Zoppi G, Durose K, Irvine SJ, Barrioz V. 2006. Grain and crystal texture properties of absorber layers in MOCVD-grown CdTe/CdS solar cells. Semiconductor Science and Technology. 21(6):763-770. https://doi.org/10.1088/0268-1242/21/6/009

MLA

VancouverVancouver

Zoppi G, Durose K, Irvine SJ, Barrioz V. Grain and crystal texture properties of absorber layers in MOCVD-grown CdTe/CdS solar cells. Semiconductor Science and Technology. 2006 Ebr 19;21(6):763-770. doi: 10.1088/0268-1242/21/6/009

Author

Zoppi, G. ; Durose, K. ; Irvine, S.J. et al. / Grain and crystal texture properties of absorber layers in MOCVD-grown CdTe/CdS solar cells. Yn: Semiconductor Science and Technology. 2006 ; Cyfrol 21, Rhif 6. tt. 763-770.

RIS

TY - JOUR

T1 - Grain and crystal texture properties of absorber layers in MOCVD-grown CdTe/CdS solar cells

AU - Zoppi, G.

AU - Durose, K.

AU - Irvine, S.J.

AU - Barrioz, V.

PY - 2006/4/19

Y1 - 2006/4/19

KW - ENGINEERING

KW - ELECTRICAL & ELECTRONIC

KW - MATERIALS SCIENCE

KW - MULTIDISCIPLINARY

KW - PHYSICS

KW - CONDENSED MATTER

U2 - 10.1088/0268-1242/21/6/009

DO - 10.1088/0268-1242/21/6/009

M3 - Article

VL - 21

SP - 763

EP - 770

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 6

ER -