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Improved memory behaviour of single-walled carbon nanotubes charge storage nodes. / Ashall, D.T.; Alba-Martin, M.; Firmager, T.; Atherton, J.; Rosamond, M.C.; Ashall, D.; Al Ghaferi, A.; Ayesh, A.; Gallant, A.J.; Mabrook, M.F.; Petty, M.C.; Zeze, D.A.

Yn: Journal of Physics D: Applied Physics, Cyfrol 45, Rhif 29, 02.07.2012, t. 295401.

Allbwn ymchwil: Cyfraniad at gyfnodolynErthygl

HarvardHarvard

Ashall, DT, Alba-Martin, M, Firmager, T, Atherton, J, Rosamond, MC, Ashall, D, Al Ghaferi, A, Ayesh, A, Gallant, AJ, Mabrook, MF, Petty, MC & Zeze, DA 2012, 'Improved memory behaviour of single-walled carbon nanotubes charge storage nodes', Journal of Physics D: Applied Physics, cyfrol. 45, rhif 29, tt. 295401. https://doi.org/10.1088/0022-3727/45/29/295401

APA

Ashall, D. T., Alba-Martin, M., Firmager, T., Atherton, J., Rosamond, M. C., Ashall, D., ... Zeze, D. A. (2012). Improved memory behaviour of single-walled carbon nanotubes charge storage nodes. Journal of Physics D: Applied Physics, 45(29), 295401. https://doi.org/10.1088/0022-3727/45/29/295401

CBE

Ashall DT, Alba-Martin M, Firmager T, Atherton J, Rosamond MC, Ashall D, Al Ghaferi A, Ayesh A, Gallant AJ, Mabrook MF, Petty MC, Zeze DA. 2012. Improved memory behaviour of single-walled carbon nanotubes charge storage nodes. Journal of Physics D: Applied Physics. 45(29):295401. https://doi.org/10.1088/0022-3727/45/29/295401

MLA

VancouverVancouver

Ashall DT, Alba-Martin M, Firmager T, Atherton J, Rosamond MC, Ashall D et al. Improved memory behaviour of single-walled carbon nanotubes charge storage nodes. Journal of Physics D: Applied Physics. 2012 Jul 2;45(29):295401. https://doi.org/10.1088/0022-3727/45/29/295401

Author

Ashall, D.T. ; Alba-Martin, M. ; Firmager, T. ; Atherton, J. ; Rosamond, M.C. ; Ashall, D. ; Al Ghaferi, A. ; Ayesh, A. ; Gallant, A.J. ; Mabrook, M.F. ; Petty, M.C. ; Zeze, D.A. / Improved memory behaviour of single-walled carbon nanotubes charge storage nodes. Yn: Journal of Physics D: Applied Physics. 2012 ; Cyfrol 45, Rhif 29. tt. 295401.

RIS

TY - JOUR

T1 - Improved memory behaviour of single-walled carbon nanotubes charge storage nodes

AU - Ashall, D.T.

AU - Alba-Martin, M.

AU - Firmager, T.

AU - Atherton, J.

AU - Rosamond, M.C.

AU - Ashall, D.

AU - Al Ghaferi, A.

AU - Ayesh, A.

AU - Gallant, A.J.

AU - Mabrook, M.F.

AU - Petty, M.C.

AU - Zeze, D.A.

PY - 2012/7/2

Y1 - 2012/7/2

N2 - To investigate their memory behaviours, single-walled carbon nanotubes (SWCNTs) were embedded in the floating gate of a hybrid metal–insulator–semiconductor structure using layer-by-layer deposition, and polymethylmethacrylate (PMMA) as the dielectric. Unlike longer SWCNT-based structures, shortened SWCNTs were shown to exhibit reliable and large memory windows by virtue of a better encapsulation which reduces charge leakage. The capacitance–voltage characteristics of the devices were consistent with electron injection into the SWCNT charge storage elements (in the floating) from the top electrode through the PMMA, using localized defects and crossing the PMMA energy barrier. In terms of material formulation, a combination of SWCNTs dispersed in sodium dodecyl sulfate and polyethyleneimine used as charge storage elements in the floating gate was shown to lead to repeatable and reliable memory characteristics. Fast switching and very large memory windows (~7 V) exhibiting high charge density (2.6 × 1012 cm−2) and charge retention in excess of ~76% were achieved under a ±10 V sweep voltage range. These results suggest that SWCNTs could lead to improved memory behaviour with the potential for application in plastic electronics.

AB - To investigate their memory behaviours, single-walled carbon nanotubes (SWCNTs) were embedded in the floating gate of a hybrid metal–insulator–semiconductor structure using layer-by-layer deposition, and polymethylmethacrylate (PMMA) as the dielectric. Unlike longer SWCNT-based structures, shortened SWCNTs were shown to exhibit reliable and large memory windows by virtue of a better encapsulation which reduces charge leakage. The capacitance–voltage characteristics of the devices were consistent with electron injection into the SWCNT charge storage elements (in the floating) from the top electrode through the PMMA, using localized defects and crossing the PMMA energy barrier. In terms of material formulation, a combination of SWCNTs dispersed in sodium dodecyl sulfate and polyethyleneimine used as charge storage elements in the floating gate was shown to lead to repeatable and reliable memory characteristics. Fast switching and very large memory windows (~7 V) exhibiting high charge density (2.6 × 1012 cm−2) and charge retention in excess of ~76% were achieved under a ±10 V sweep voltage range. These results suggest that SWCNTs could lead to improved memory behaviour with the potential for application in plastic electronics.

U2 - 10.1088/0022-3727/45/29/295401

DO - 10.1088/0022-3727/45/29/295401

M3 - Article

VL - 45

SP - 295401

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 29

ER -