TY - JOUR

T1 - Improvement of the deep UV sensor performance of a β-Ga2O3 photodiode by coupling of two planar diodes

AU - Vieira, Douglas H.

AU - Badiei, Nafiseh

AU - Evans, Jonathan E.

AU - Alves, Neri

AU - Kettle, Jeffrey

AU - Li, Lijie

N1 - Welsh European Funding Office (WEFO) through the Solar Photovoltaic Academic Research Consortium II (SPARC II) Project; 10.13039/501100001807-Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP); Programa de Pós-Graduação em Ciência e Tecnologia de Materiais (POSMAT);

PY - 2020/11

Y1 - 2020/11

N2 - β-Ga2O3 is one of promising semiconductor materials that has been widely used in power electronics and ultraviolet(UV) detectors due to its wide bandgap and high sensitivity to UV light. Specifically, for the UV detection application, it hasbeen reported that the photocurrent was in the scale of micro Amps (μA), which normally requires sophisticated signalprocessing units. In this work, a novel approach based upon coupling of two Schottky diodes is reported, leads to a substantialincrease in photocurrent (~186 times) when benchmarked against a conventional planar UV photodiode. The detectivity andresponsivity of the new device have also been significantly increased; the rectification ratio of this device was measured to be 1.7x 107 with ultra-low dark current, when measured in the reverse bias. The results confirm the approach of coupling two Schottkydiodes has enormous potential for improving the optical performance of deep UV sensors.

AB - β-Ga2O3 is one of promising semiconductor materials that has been widely used in power electronics and ultraviolet(UV) detectors due to its wide bandgap and high sensitivity to UV light. Specifically, for the UV detection application, it hasbeen reported that the photocurrent was in the scale of micro Amps (μA), which normally requires sophisticated signalprocessing units. In this work, a novel approach based upon coupling of two Schottky diodes is reported, leads to a substantialincrease in photocurrent (~186 times) when benchmarked against a conventional planar UV photodiode. The detectivity andresponsivity of the new device have also been significantly increased; the rectification ratio of this device was measured to be 1.7x 107 with ultra-low dark current, when measured in the reverse bias. The results confirm the approach of coupling two Schottkydiodes has enormous potential for improving the optical performance of deep UV sensors.

KW - Deep ultraviolet (UV)

KW - Schottky diode

KW - gallium oxide

KW - performance improvement

KW - photodetector

U2 - 10.1109/TED.2020.3022341

DO - 10.1109/TED.2020.3022341

M3 - Article

VL - 67

SP - 4947

EP - 4952

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 11

ER -