Intelligent CMOS control of RF MEMS capacitive switches
Allbwn ymchwil: Cyfraniad at gynhadledd › Papur
Fersiynau electronig
Dangosydd eitem ddigidol (DOI)
A CMOS control circuit capable of closed-loop capacitance sensing and control of RF MEMS switches was designed, fabricated, and tested. The control was based on fine-tuning the magnitude of the bias voltage of the switches according to the difference between sensed and targeted capacitances. Intelligence could be programmed by periodically alternating the sign of the bias voltage when its magnitude to maintain the targeted capacitance drifted significantly due to dielectric charging. Such an intelligent control could also be used to compensate for process variation, ambient temperature change, and RF power loading, which would make RF MEMS capacitive switches not only more reliable, but also more robust.
| Iaith wreiddiol | Saesneg |
|---|---|
| Dynodwyr Gwrthrych Digidol (DOIs) | |
| Statws | Cyhoeddwyd - 17 Meh 2012 |
| Digwyddiad | Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, Montreal, 17-22 June 2012 - Hyd: 3 Ion 0001 → … |
Cynhadledd
| Cynhadledd | Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, Montreal, 17-22 June 2012 |
|---|---|
| Cyfnod | 3/01/01 → … |