TY - JOUR

T1 - IR Sensor Based on Low Bandgap Organic Photodiode With Up-Converting Phosphor

AU - Kettle, J.P.

AU - Kettle, J.

AU - Chang, S.W.

AU - Horie, M.

N1 - (c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.

PY - 2015/1/28

Y1 - 2015/1/28

N2 - We report an infrared (IR) sensor which is fabricated by integrating a PCPDTBT:PCBM organic photodiode (OPD) with an up-converting (UC) phosphor. The UC phosphor extends the response range by absorbing incoming light with a wavelength of 986 nm and re-emitting at 804 nm, which is a wavelength that can be absorbed by the active layer, resulting in a generation of a photocurrent. In order to ensure low reverse bias leakage current, PEDOT:PSS was not used as a hole transporting layer, which reduced reverse leakage current by two orders of magnitude compared with conventional hole transporting layers. An IR-emitting laser diode (with emission at 986 nm) is used as a light source to illuminate the sensor. The results demonstrate the proof of principle of sensing using polymer-based OPDs in the near-IR, with wider applications possible in areas, such as telecommunications or sensors if different UC phosphors are applied.

AB - We report an infrared (IR) sensor which is fabricated by integrating a PCPDTBT:PCBM organic photodiode (OPD) with an up-converting (UC) phosphor. The UC phosphor extends the response range by absorbing incoming light with a wavelength of 986 nm and re-emitting at 804 nm, which is a wavelength that can be absorbed by the active layer, resulting in a generation of a photocurrent. In order to ensure low reverse bias leakage current, PEDOT:PSS was not used as a hole transporting layer, which reduced reverse leakage current by two orders of magnitude compared with conventional hole transporting layers. An IR-emitting laser diode (with emission at 986 nm) is used as a light source to illuminate the sensor. The results demonstrate the proof of principle of sensing using polymer-based OPDs in the near-IR, with wider applications possible in areas, such as telecommunications or sensors if different UC phosphors are applied.

U2 - 10.1109/JSEN.2015.2394744

DO - 10.1109/JSEN.2015.2394744

M3 - Article

VL - 15

SP - 3221

EP - 3224

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

SN - 1530-437X

IS - 6

ER -