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Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma. / Panduranga, Parashara; Abdou, Aly; Pedersen, Rasmus H.; Ren, Zhong; Nezhad, Maziar.

Yn: Journal of Vacuum Science and Technology B, Cyfrol 37, Rhif 6, 061206, 30.11.2019.

Allbwn ymchwil: Cyfraniad at gyfnodolynErthygl

HarvardHarvard

Panduranga, P, Abdou, A, Pedersen, RH, Ren, Z & Nezhad, M 2019, 'Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma', Journal of Vacuum Science and Technology B, cyfrol. 37, rhif 6, 061206. https://doi.org/10.1116/1.5116021

APA

Panduranga, P., Abdou, A., Pedersen, R. H., Ren, Z., & Nezhad, M. (2019). Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma. Journal of Vacuum Science and Technology B, 37(6), [061206]. https://doi.org/10.1116/1.5116021

CBE

Panduranga P, Abdou A, Pedersen RH, Ren Z, Nezhad M. 2019. Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma. Journal of Vacuum Science and Technology B. 37(6). https://doi.org/10.1116/1.5116021

MLA

Panduranga, Parashara et al. "Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma". Journal of Vacuum Science and Technology B. 2019. 37(6). https://doi.org/10.1116/1.5116021

VancouverVancouver

Panduranga P, Abdou A, Pedersen RH, Ren Z, Nezhad M. Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma. Journal of Vacuum Science and Technology B. 2019 Nov 30;37(6). 061206. https://doi.org/10.1116/1.5116021

Author

Panduranga, Parashara ; Abdou, Aly ; Pedersen, Rasmus H. ; Ren, Zhong ; Nezhad, Maziar. / Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma. Yn: Journal of Vacuum Science and Technology B. 2019 ; Cyfrol 37, Rhif 6.

RIS

TY - JOUR

T1 - Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma

AU - Panduranga, Parashara

AU - Abdou, Aly

AU - Pedersen, Rasmus H.

AU - Ren, Zhong

AU - Nezhad, Maziar

PY - 2019/11/4

Y1 - 2019/11/4

N2 - The characteristics of isotropic etching of silicon in a purely inductively coupled SF6 plasma are quantitatively studied. Since the etch results are strongly dependent on mask features, the authors investigated both large area and narrow trench etch characteristics. Circles of diameter 500μm were used as a proxy for unpatterned surfaces and etched for different durations to establish the material etch rate and surface roughness. The average etch rate using the chosen recipe was found to be 2.27μm/min. Arrays of narrow trenches ranging from 8 to 28μm were also etched to analyze the effect of trench size on etch rate and degree of anisotropy. The etch rate of the trenches was found to strongly decrease with decreasing trench width. The results demonstrate that isotropic SF6 etch can be readily used as a replacement for more exotic silicon vapor phase etch chemistries such as XeF2

AB - The characteristics of isotropic etching of silicon in a purely inductively coupled SF6 plasma are quantitatively studied. Since the etch results are strongly dependent on mask features, the authors investigated both large area and narrow trench etch characteristics. Circles of diameter 500μm were used as a proxy for unpatterned surfaces and etched for different durations to establish the material etch rate and surface roughness. The average etch rate using the chosen recipe was found to be 2.27μm/min. Arrays of narrow trenches ranging from 8 to 28μm were also etched to analyze the effect of trench size on etch rate and degree of anisotropy. The etch rate of the trenches was found to strongly decrease with decreasing trench width. The results demonstrate that isotropic SF6 etch can be readily used as a replacement for more exotic silicon vapor phase etch chemistries such as XeF2

U2 - 10.1116/1.5116021

DO - 10.1116/1.5116021

M3 - Article

VL - 37

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

SN - 1071-1023

IS - 6

M1 - 061206

ER -