Multi-interface roughness effects on electron mobility in a Ga0.5In0.5P/GaAs multisubband coupled quantum well structure.

Allbwn ymchwil: Cyfraniad at gyfnodolynErthygladolygiad gan gymheiriaid

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Multi-interface roughness effects on electron mobility in a Ga0.5In0.5P/GaAs multisubband coupled quantum well structure. / Sahu, T.; Shore, K.A.
Yn: Semiconductor Science and Technology, Cyfrol 24, Rhif 9, 01.09.2009, t. 095021.

Allbwn ymchwil: Cyfraniad at gyfnodolynErthygladolygiad gan gymheiriaid

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Sahu T, Shore KA. Multi-interface roughness effects on electron mobility in a Ga0.5In0.5P/GaAs multisubband coupled quantum well structure. Semiconductor Science and Technology. 2009 Medi 1;24(9):095021. doi: 10.1088/0268-1242/24/9/095021

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Sahu, T. ; Shore, K.A. / Multi-interface roughness effects on electron mobility in a Ga0.5In0.5P/GaAs multisubband coupled quantum well structure. Yn: Semiconductor Science and Technology. 2009 ; Cyfrol 24, Rhif 9. tt. 095021.

RIS

TY - JOUR

T1 - Multi-interface roughness effects on electron mobility in a Ga0.5In0.5P/GaAs multisubband coupled quantum well structure.

AU - Sahu, T.

AU - Shore, K.A.

PY - 2009/9/1

Y1 - 2009/9/1

KW - ENGINEERING

KW - ELECTRICAL & ELECTRONIC

KW - MATERIALS SCIENCE

KW - MULTIDISCIPLINARY

KW - PHYSICS

KW - CONDENSED MATTER

U2 - 10.1088/0268-1242/24/9/095021

DO - 10.1088/0268-1242/24/9/095021

M3 - Article

VL - 24

SP - 095021

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 9

ER -