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Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysis. / Gomes, Tiago C.; Kumar, Dinesh; Fugikawa-Santos, Lucas et al.
Yn: ACS Combinatorial Science, Cyfrol 21, Rhif 5, 13.05.2019, t. 370-379.

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Gomes, TC, Kumar, D, Fugikawa-Santos, L, Alves, N & Kettle, J 2019, 'Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysis', ACS Combinatorial Science, cyfrol. 21, rhif 5, tt. 370-379. https://doi.org/10.1021/acscombsci.8b00195

APA

Gomes, T. C., Kumar, D., Fugikawa-Santos, L., Alves, N., & Kettle, J. (2019). Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysis. ACS Combinatorial Science, 21(5), 370-379. https://doi.org/10.1021/acscombsci.8b00195

CBE

MLA

VancouverVancouver

Gomes TC, Kumar D, Fugikawa-Santos L, Alves N, Kettle J. Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysis. ACS Combinatorial Science. 2019 Mai 13;21(5):370-379. Epub 2019 Maw 25. doi: 10.1021/acscombsci.8b00195

Author

Gomes, Tiago C. ; Kumar, Dinesh ; Fugikawa-Santos, Lucas et al. / Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysis. Yn: ACS Combinatorial Science. 2019 ; Cyfrol 21, Rhif 5. tt. 370-379.

RIS

TY - JOUR

T1 - Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysis

AU - Gomes, Tiago C.

AU - Kumar, Dinesh

AU - Fugikawa-Santos, Lucas

AU - Alves, Neri

AU - Kettle, Jeffrey

PY - 2019/5/13

Y1 - 2019/5/13

N2 - The present study reports a two-level multivariate analysis to optimise the production of anodised aluminium oxide (Al2O3) dielectric films for zinc oxide thin-film transistor (TFTs). Fourteen performance parameters were measured and Analysis Of Variance (ANOVA) of the combined responses has been applied to identify how the Al2O3 dielectric fabrication process influences the electrical properties of the TFTs. Using this approach, the levels for the manufacturing factors to achieve optimal overall device performance have been identified and ranked. The cross-checked analysis of the TFT performance parameters demonstrated that the appropriate control of the anodisation process can have a higher impact on TFT performance than the use of traditional methods of surface treatment of the dielectric layer. Flexible electronics applications are expected to grow substantially over the next 10 years. Given the complexity and challenges of new flexible electronics components, this ‘multivariate’ approach could be adopted more widely by the industry to improve the reliability and performance of such devices.

AB - The present study reports a two-level multivariate analysis to optimise the production of anodised aluminium oxide (Al2O3) dielectric films for zinc oxide thin-film transistor (TFTs). Fourteen performance parameters were measured and Analysis Of Variance (ANOVA) of the combined responses has been applied to identify how the Al2O3 dielectric fabrication process influences the electrical properties of the TFTs. Using this approach, the levels for the manufacturing factors to achieve optimal overall device performance have been identified and ranked. The cross-checked analysis of the TFT performance parameters demonstrated that the appropriate control of the anodisation process can have a higher impact on TFT performance than the use of traditional methods of surface treatment of the dielectric layer. Flexible electronics applications are expected to grow substantially over the next 10 years. Given the complexity and challenges of new flexible electronics components, this ‘multivariate’ approach could be adopted more widely by the industry to improve the reliability and performance of such devices.

KW - ANOVA

KW - Plackett-Burman design

KW - aluminum oxide

KW - anodization

KW - design of experiments

KW - thin-film transistors

U2 - 10.1021/acscombsci.8b00195

DO - 10.1021/acscombsci.8b00195

M3 - Article

VL - 21

SP - 370

EP - 379

JO - ACS Combinatorial Science

JF - ACS Combinatorial Science

IS - 5

ER -