Organic Digital Logic and Analog Circuits Fabricated in a Roll-to-Roll Compatible Vacuum-Evaporation Process
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
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Yn: IEEE Transactions on Electron Devices, Cyfrol 61, Rhif 8, 23.06.2014, t. 2950-2956.
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
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TY - JOUR
T1 - Organic Digital Logic and Analog Circuits Fabricated in a Roll-to-Roll Compatible Vacuum-Evaporation Process
AU - Taylor, D.M.
AU - Patchett, E.R.
AU - Williams, A.
AU - Neto, N.J.
AU - Ding, Z.
AU - Assender, H.E.
AU - Morrison, J.J.
AU - Yeates, S.G.
PY - 2014/6/23
Y1 - 2014/6/23
N2 - We report the fabrication of a range of organic circuits produced by a high-yielding, vacuum-based process compatible with roll-to-roll production. The circuits include inverters, NAND and NOR logic gates, a simple memory element (set-reset latch), and a modified Wilson current mirror circuit. The measured circuit responses are presented together with simulated responses based on a previously reported transistor model of organic transistors produced using our fabrication process. Circuit simulations replicated all the key features of the experimentally observed circuit performance. The logic gates were capable of operating at frequencies in excess of 1 kHz while the current mirror circuit produced currents up to 18 μA.
AB - We report the fabrication of a range of organic circuits produced by a high-yielding, vacuum-based process compatible with roll-to-roll production. The circuits include inverters, NAND and NOR logic gates, a simple memory element (set-reset latch), and a modified Wilson current mirror circuit. The measured circuit responses are presented together with simulated responses based on a previously reported transistor model of organic transistors produced using our fabrication process. Circuit simulations replicated all the key features of the experimentally observed circuit performance. The logic gates were capable of operating at frequencies in excess of 1 kHz while the current mirror circuit produced currents up to 18 μA.
U2 - 10.1109/TED.2014.2329329
DO - 10.1109/TED.2014.2329329
M3 - Article
VL - 61
SP - 2950
EP - 2956
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 8
ER -