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Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

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Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate. / Sleiman, A.; Rosamond, M.C.; Martin, M.A. et al.
Yn: Applied Physics Letters, Cyfrol 100, Rhif 2, 09.01.2012.

Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid

HarvardHarvard

Sleiman, A, Rosamond, MC, Martin, MA, Ayesh, A, Al Ghaferi, A, Gallant, AJ, Mabrook, MF & Zeze, DA 2012, 'Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate', Applied Physics Letters, cyfrol. 100, rhif 2. https://doi.org/10.1063/1.3675856

APA

Sleiman, A., Rosamond, M. C., Martin, M. A., Ayesh, A., Al Ghaferi, A., Gallant, A. J., Mabrook, M. F., & Zeze, D. A. (2012). Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate. Applied Physics Letters, 100(2). https://doi.org/10.1063/1.3675856

CBE

Sleiman A, Rosamond MC, Martin MA, Ayesh A, Al Ghaferi A, Gallant AJ, Mabrook MF, Zeze DA. 2012. Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate. Applied Physics Letters. 100(2). https://doi.org/10.1063/1.3675856

MLA

Sleiman, A. et al. "Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate". Applied Physics Letters. 2012. 100(2). https://doi.org/10.1063/1.3675856

VancouverVancouver

Sleiman A, Rosamond MC, Martin MA, Ayesh A, Al Ghaferi A, Gallant AJ et al. Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate. Applied Physics Letters. 2012 Ion 9;100(2). doi: 10.1063/1.3675856

Author

Sleiman, A. ; Rosamond, M.C. ; Martin, M.A. et al. / Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate. Yn: Applied Physics Letters. 2012 ; Cyfrol 100, Rhif 2.

RIS

TY - JOUR

T1 - Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

AU - Sleiman, A.

AU - Rosamond, M.C.

AU - Martin, M.A.

AU - Ayesh, A.

AU - Al Ghaferi, A.

AU - Gallant, A.J.

AU - Mabrook, M.F.

AU - Zeze, D.A.

PY - 2012/1/9

Y1 - 2012/1/9

N2 - A pentacene-based organic metal-insulator-semiconductor memory device, utilizing single walled carbon nanotubes (SWCNTs) for charge storage is reported. SWCNTs were embedded, between SU8 and polymethylmethacrylate to achieve an efficient encapsulation. The devices exhibit capacitance-voltage clockwise hysteresis with a 6 V memory window at ± 30 V sweep voltage, attributed to charging and discharging of SWCNTs. As the applied gate voltage exceeds the SU8 breakdown voltage, charge leakage is induced in SU8 to allow more charges to be stored in the SWCNT nodes. The devices exhibited high storage density (∼9.15 × 1011 cm−2) and demonstrated 94% charge retention due to the superior encapsulation.

AB - A pentacene-based organic metal-insulator-semiconductor memory device, utilizing single walled carbon nanotubes (SWCNTs) for charge storage is reported. SWCNTs were embedded, between SU8 and polymethylmethacrylate to achieve an efficient encapsulation. The devices exhibit capacitance-voltage clockwise hysteresis with a 6 V memory window at ± 30 V sweep voltage, attributed to charging and discharging of SWCNTs. As the applied gate voltage exceeds the SU8 breakdown voltage, charge leakage is induced in SU8 to allow more charges to be stored in the SWCNT nodes. The devices exhibited high storage density (∼9.15 × 1011 cm−2) and demonstrated 94% charge retention due to the superior encapsulation.

U2 - 10.1063/1.3675856

DO - 10.1063/1.3675856

M3 - Article

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

ER -