Power output of 650-nm self-pulsating A1GaInP laser diodes for optical storage applications
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
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Power output of 650-nm self-pulsating A1GaInP laser diodes for optical storage applications. / Jones, D.R.; Rees, P.; Pierce, I. et al.
Yn: IEEE Journal of Quantum Electronics, Cyfrol 37, Rhif 12, 01.12.2001, t. 1632-1635.
Yn: IEEE Journal of Quantum Electronics, Cyfrol 37, Rhif 12, 01.12.2001, t. 1632-1635.
Allbwn ymchwil: Cyfraniad at gyfnodolyn › Erthygl › adolygiad gan gymheiriaid
HarvardHarvard
Jones, DR, Rees, P, Pierce, I & Summers, HD 2001, 'Power output of 650-nm self-pulsating A1GaInP laser diodes for optical storage applications', IEEE Journal of Quantum Electronics, cyfrol. 37, rhif 12, tt. 1632-1635. https://doi.org/10.1109/3.970910
APA
Jones, D. R., Rees, P., Pierce, I., & Summers, H. D. (2001). Power output of 650-nm self-pulsating A1GaInP laser diodes for optical storage applications. IEEE Journal of Quantum Electronics, 37(12), 1632-1635. https://doi.org/10.1109/3.970910
CBE
Jones DR, Rees P, Pierce I, Summers HD. 2001. Power output of 650-nm self-pulsating A1GaInP laser diodes for optical storage applications. IEEE Journal of Quantum Electronics. 37(12):1632-1635. https://doi.org/10.1109/3.970910
MLA
Jones, D.R. et al. "Power output of 650-nm self-pulsating A1GaInP laser diodes for optical storage applications". IEEE Journal of Quantum Electronics. 2001, 37(12). 1632-1635. https://doi.org/10.1109/3.970910
VancouverVancouver
Jones DR, Rees P, Pierce I, Summers HD. Power output of 650-nm self-pulsating A1GaInP laser diodes for optical storage applications. IEEE Journal of Quantum Electronics. 2001 Rhag 1;37(12):1632-1635. doi: 10.1109/3.970910
Author
RIS
TY - JOUR
T1 - Power output of 650-nm self-pulsating A1GaInP laser diodes for optical storage applications
AU - Jones, D.R.
AU - Rees, P.
AU - Pierce, I.
AU - Summers, H.D.
PY - 2001/12/1
Y1 - 2001/12/1
KW - ENGINEERING
KW - ELECTRICAL & ELECTRONIC
KW - PHYSICS
KW - APPLIED
U2 - 10.1109/3.970910
DO - 10.1109/3.970910
M3 - Article
VL - 37
SP - 1632
EP - 1635
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
SN - 0018-9197
IS - 12
ER -